2MBI100U4H-170 Datasheet PDF - Fuji Electric

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2MBI100U4H-170
Fuji Electric

Part Number 2MBI100U4H-170
Description IGBT Module
Page 13 Pages


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SPECIFICATION
Device Name : IGBT MODULE
Type Name
: 2MBI100U4H-170
Spec. No. :
MS5F 6143
Jun. 01 05 S.Miyashita
Jun. 01 05 T.Miyasaka
K.Yamada
Y.Seki
MS5F6143
1
13
a
b
H04-004-07b



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Revised Records
Date
Classi-
fication
Ind.
Jun.-01 -05 Enactment
Content
Applied
date
Drawn Checked Checked Approved
Issued
date
T.Miyasaka K.Yamada Y.Seki
Oct.-25-05 Revision
a Revised characteristics
VCE(sat) (P4/13)
S.Miyashita O.Ikawa K.Yamada T.Miyasaka
May.-31 -06 Revision
b Revised Reliability test results
(P8/13)
H.Kakiki M.Watanabe K.Yamada T.Miyasaka
MS5F6143
2
13
a
b
H04-004-06b



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1. Outline Drawing ( Unit : mm )
2MBI100U4H-170
2. Equivalent circuit
MS5F6143
3
13
a
b
H04-004-03a



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3.Absolute Maximum Ratings ( at Tc= 25°C unless otherwise specified
It em s
Sym b o l s
Conditions
Collector-Emitter voltage
VCES
Gate-Emitter voltage
VGES
Ic Continuous Tc=25°C
Tc=80°C
Collector current
Icp 1ms
-Ic
Tc=25°C
Tc=80°C
-Ic pulse 1ms
Collector Power Dissipation
Pc 1 device
Junction temperature
Tj
Storage temperature
Tstg
Isolation
voltage
between terminal and copper base (*1)
Viso AC : 1min.
Screw Mounting (*2)
Torque Terminals (*3)
-
(*1) All terminals should be connected together when isolation test will be done.
(*2) Recommendable Value : Mounting 2.5~3.5 Nm (M5 or M6)
(*3) Recommendable Value : Terminals 3.5~4.5 Nm (M6)
Max i m u m
Ratings
1700
±20
150
100
300
200
100
200
540
150
-40 ~ +125
Units
V
V
A
W
°C
3400
VAC
3.5
4.5
Nm
4. Electrical characteristics ( at Tj= 25°C unless otherwise specified)
Items
Symbols
Conditions
Zero gate voltage
Collector current
ICES
VGE = 0V
VCE = 1700V
Gate-Emitter
leakage current
IGES
VCE = 0V
VGE=±20V
Gate-Emitter
threshold voltage
VGE(th)
VCE = 20V
Ic = 100mA
Collector-Emitter
saturation voltage
VCE(sat)
(terminal)
VCE(sat)
(chip)
VGE=15V
Ic = 100A
Tj= 25°C
Tj=125°C
Tj= 25°C
Tj=125°C
Input capacitance
Cies VCE=10V,VGE=0V,f=1MHz
ton Vcc = 900V
Turn-on time
tr Ic = 100A
tr (i) VGE=±15V
Turn-off time
toff Rg = 4.7 Ω
tf
Forward on voltage
VF
(terminal)
VF
(chip)
VGE=0V
IF = 100A
Tj= 25°C
Tj=125°C
Tj= 25°C
Tj=125°C
Reverse recovery time
trr IF = 100A
Lead resistance,
terminal-chip(*4)
R lead
(*4) Biggest internal terminal resistance among arm.
Characteristics
min. typ. max.
- - 1.0
- - 200
4.5 6.5 8.5
- a 2.35 a 2.50
- a 2.75
-
- 2.25 2.40
- 2.65
-
-9
-
- 0.62 1.20
- 0.39 0.60
- 0.05
-
- 0.55 1.50
- 0.09 0.30
- 1.85 2.20
- 2.05
-
- 1.80 2.15
- 2.00
-
- - 0.6
- 0.53
-
Units
mA
nA
V
V
nF
μs
V
μs
mΩ
MS5F6143
4
13
a
b
H04-004-03a



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