2MBI1000VXB-170E-50 Datasheet PDF - Fuji Electric

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2MBI1000VXB-170E-50
Fuji Electric

Part Number 2MBI1000VXB-170E-50
Description IGBT Module
Page 7 Pages


2MBI1000VXB-170E-50 datasheet pdf
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http://www.fujielectric.com/products/semiconductor/
2MBI1000VXB-170E-50
IGBT Modules
IGBT MODULE (V series)
1700V / 1000A / 2 in one package
Features
High speed switching
Voltage drive
Low Inductance module structure
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply
Industrial machines, such as Welding machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)
Items
Collector-Emitter voltage
Gate-Emitter voltage
Symbols
VCES
VGES
Ic
Collector current
Ic pulse
-Ic
-Ic pulse
Collector power dissipation
Pc
Junction temperature
Tj
Operating junction temperature (under switching conditions) Tjop
Case temperature
TC
Storage temperature
Tstg
Isolation voltage
between terminal and copper base (*1)
between thermistor and others (*2)
Viso
Mounting
Screw torque (*3) Main Terminals
-
Sense Terminals
Conditions
Continuous
1ms
1ms
1 device
Tc=25°C
Tc=100°C
AC : 1min.
M5
M8
M4
Maximum ratings
1700
±20
1400
1000
2000
1000
2000
6250
175
150
150
-40 ~ +150
4000
6.0
10.0
2.1
Units
V
V
A
W
°C
VAC
Nm
Note *1: All terminals should be connected together during the test.
Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test.
Note *3: Recommendable Value : Mounting
3.0 ~   6.0 Nm (M5) Recommendable Value : Main Terminals 8.0 ~ 10.0 Nm (M8)
Recommendable Value : Sense Terminals  1.8 ~ 2.1 Nm (M4)
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Items
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-on time
Turn-off time
Forward on voltage
Reverse recovery time
Resistance
B value
Symbols
ICES
IGES
VGE (th)
VCE (sat)
(terminal)
(*4)
VCE (sat)
(chip)
Cies
ton
tr
tr (i)
toff
tf
VF
(terminal)
(*4)
VF
(chip)
trr
R
B
Conditions
VGE = 0V, VCE = 1700V
VCE = 0V, VGE = ±20V
VCE = 20V, IC = 1000mA
Tj=25°C
Tj=125°C
VGE = 15V
Tj=150°C
IC = 1000A
Tj=25°C
Tj=125°C
Tj=150°C
VCE = 10V, VGE = 0V, f = 1MHz
VCC = 900V
IC = 1000A
VGE = ±15V
RG = +1.2/-1.8Ω
VGE = 0V
IF = 1000A
IF = 1000A
T=25°C
T=100°C
T=25/50°C
Tj=25°C
Tj=125°C
Tj=150°C
Tj=25°C
Tj=125°C
Tj=150°C
Characteristics
min. typ. max.
- - 6.0
- - 1200
6.0 6.5 7.0
- 2.10 2.55
- 2.50 -
- 2.55 -
- 2.00 2.45
- 2.40 -
- 2.45 -
- 94 -
- 1.25 -
- 0.5 -
- 0.15 -
- 1.55 -
- 0.15 -
- 1.95 2.40
- 2.20 -
- 2.15 -
- 1.85 2.30
- 2.10 -
- 2.05 -
- 0.24 -
- 5000 -
465 495 520
3305 3375 3450
Units
mA
nA
V
V
nF
µs
V
µs
K
Note *1: Please refer to page 6 , there is definition of on-state voltage at terminal.
Thermal resistance characteristics
Items
Thermal resistance (1device)
Contact thermal resistance (1device) (*5)
Symbols
Rth(j-c)
Rth(c-f)
Conditions
Inverter IGBT
Inverter FWD
with Thermal Compound
Characteristics
min. typ. max.
- - 0.024
- - 0.048
- 0.0083 -
Units
°C/W
Note *5: This is the value which is defined mounting on the additional cooling fin with thermal compound.
1



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2MBI1000VXB-170E-50
Characteristics (Representative)
[INVERTER]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25°C / chip
2000
1800
1600
1400
1200
1000
800
600
400
200
0
0
VGE=20V
15V
12V
10V
8V
1234
Collector-Emitter voltage: VCE [V]
5
[INVERTER]
Collector current vs. Collector-Emitter voltage (typ.)
VGE= 15V / chip
2000
1800
1600
1400
1200
1000
800
600
400
200
0
0
Tj=25°C
125°C
150°C
1234
Collector-Emitter Voltage: VCE [V]
5
[INVERTER]
Gate Capacitance vs. Collector-Emitter Voltage (typ.)
VGE= 0V, ƒ= 1MHz, Tj= 25°C
1000
Cies
100
10 Cres
Coes
1
0 5 10 15 20 25 30
Collector-Emitter voltage: VCE [V]
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
[INVERTER]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 150°C / chip
2000
1800
1600
1400
1200
1000
800
600
400
200
0
0
VGE= 20V
15V
12V
10V
8V
12345
Collector-Emitter voltage: VCE [V]
[INVERTER]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj= 25°C / chip
10
8
6
4
Ic=2000A
2 Ic=1000A
Ic=500A
0
5 10 15 20 25
Gate-Emitter Voltage: VGE [V]
[INVERTER]
Dynamic Gate Charge (typ.)
Vcc=900V, Ic=1000A, Tj= 25°C
VCE
VGE
0 2000 4000 6000 8000 10000 12000
Gate charge: Qg [nC]
2



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2MBI1000VXB-170E-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
[INVERTER]
Switching time vs. Collector current (typ.)
Vcc=900V, VGE=±15V, RG=+1.2/-1.8Ω, Tj=25°C
10000
1000
toff
ton
tr
100 tf
10
0
500 1000 1500 2000
Collector current: Ic [A]
2500
[INVERTER]
Switching time vs. Collector current (typ.)
Vcc=900V, VGE=±15V, RG=+1.2/-1.8Ω, Tj=125°C, 150°C
10000
1000
toff
ton
tr
100
10
0
Tj=125oC
Tj=150oC
tf
500 1000 1500 2000
Collector current: Ic [A]
2500
[INVERTER]
Switching time vs. Gate resistance (typ.)
Vcc=900V, Ic=1000A, VGE=±15V, Tj=125°C, 150°C
10000
1000
toff
ton
tr
100
10
0.1
Tj=125oC
Tj=150oC
1
Gate resistance: RG [Ω]
tf
10
[INVERTER]
Switching loss vs. Collector current (typ.)
Vcc=900V, VGE=±15V, RG=+1.2/-1.8Ω, Tj=125°C, 150°C
900
800
700
600
500
400
300
200
100
0
0
Tj=125oC
Tj=150oC
Eoff
Eon
Err
500 1000 1500 2000 2500
Collector current: Ic [A]
[INVERTER]
Switching loss vs. Gate resistance (typ.)
Vcc=900V, Ic=1000A, VGE=±15V, Tj=125°C, 150°C
1200
1000
800
Tj=125oC
Tj=150oC
Eon
600
Eoff
400
200
0
0
Err
1
Gate resistance: RG [Ω]
10
3
[INVERTER]
Reverse bias safe operating area (max.)
+VGE=15V, -VGE=15V, RG=+1.2/-1.8Ω, Tj=150°C
2500
2000
1500
1000
500
Notice)
Please refer to page 6.
There is definision of VCE.
0
0
500
1000
1500
2000
Collector-Emitter voltage: VCE [V]



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2MBI1000VXB-170E-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
[INVERTER]
Forward Current vs. Forward Voltage (typ.)
chip
2000
1800
1600
1400
1200
1000
800
600
400
200
0
0
Tj=25°C
125°C
150°C
123
Forward on voltage: VF [V]
4
[INVERTER]
Reverse Recovery Characteristics (typ.)
Vcc=900V, VGE=±15V, RG=+1.2/-1.8Ω, Tj=125°C, 150°C
10000
Tj=125oC
Tj=150oC
1000
Irr
trr
100
10
0
500 1000 1500 2000
Forward current: IF [A]
2500
[THERMISTOR]
Temperature characteristic (typ.)
100
[INVERTER]
Reverse Recovery Characteristics (typ.)
Vcc=900V, VGE=±15V, RG=+1.2/-1.8Ω, Tj=25°C
10000
1000
100
Irr
trr
10
0
500 1000 1500 2000
Forward current: IF [A]
2500
Transient Thermal Resistance (max.)
0.1
FWD
IGBT
0.01
0.001
0.001
0.01 0.1
Pulse Width : Pw [sec]
1
10
1
0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160
Temperature [°C]
4



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