2KG026075YQ Datasheet PDF - Silan Microelectronics

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2KG026075YQ
Silan Microelectronics

Part Number 2KG026075YQ
Description SWITCHING DIODE CHIPS
Page 1 Pages


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2KG026075YQ
2KG026075YQ SWITCHING DIODE CHIPS
DESCRIPTION
Ø 2KG026075YQ is a high speed switching diode chip
fabricated in planar technology.
Ø This chip can be encapsulated as 1N4148 switching diode.
Ø When the chip is selected glass package, the chip thickness
is 100µm, and the top electrodes material is Ag bump, the
back-side electrodes material is Ag.
Ø Chip size: 0.26 X 0.26 (mm)2.
2KG026XXX CHIP TOPOGRAPHY
2KG026075YQ ELECTRICAL CHARACTERISTICS (TJ=25°C)
Characteristics
Forward Voltage
Reverse Voltage
Reverse Current
Diode Capacitance
Reverse Recovery Time
Symbol
Test Conditions
IF=10mA.
VF
IF=100mA.
VBR IB=100µA.
VR=20V.
IR
VR=75V.
Cd f=1MHz; VR=0.
When switched from IF=10mA to
trr VR=6V; RL=100; measured at
IR=1mA.
2KG026075YQ APPEARANCE Top side material is Ag ball
www.DataSheet4U.com
Min.
--
0.62
100
--
--
--
Typ.
--
0.9
120
--
--
1.9
Max.
1.0
1.2
--
25
5
4
Unit
V
V
V
nA
µA
pF
-- -- 4 ns
Parameter
Chip Size
Chip Thickness
Bump Diameter
Bump Height
Scribe Line Width
Chip Appearance Diagram
Symbol
D
C
A
B
/
Min.
220
85
135
20
--
Type
--
--
--
--
40
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http: www.silan.com.cn
Max.
240
120
160
40
--
Unit
µm
µm
µm
µm
µm
REV:1.0 2006.04.25
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2KG026075YQ SWITCHING DIODE CHIPS 2KG026075YQ
Silan Microelectronics
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