2761I-A Datasheet PDF - Advanced Power Electronics

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2761I-A
Advanced Power Electronics

Part Number 2761I-A
Description AP2761I-A
Page 4 Pages


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Advanced Power
Electronics Corp.
Repetitive Avalanche Rated
Fast Switching
Simple Drive Requirement
RoHS Compliant
Description
G
AP2761I-A
Pb Free Plating Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BVDSS
650V
RDS(ON)
1.0Ω
ID 10A
S
AP2761 series are specially designed as main switching devices for
universal 90~265VAC off-line AC/DC converter applications.
TO-220CFM type provide high blocking voltage to overcome voltage surge
and sag in the toughest power system with the best combination of fast
switching,ruggedized design and cost-effectiveness.
G
DS
TO-220CFM(I)
Absolute Maximum Ratings
Symbol
Parameter
VDS Drain-Source Voltage
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
EAS
IAR
TSTG
TJ
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy2
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Rating
650
±30
10
6.4
36
37
0.3
65
10
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/
mJ
A
Max.
Max.
Value
3.4
65
Units
/W
/W
Data & specifications subject to change without notice
200706053-1/4
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AP2761I-A
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage VGS=0V, ID=1mA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
Static Drain-Source On-Resistance VGS=10V, ID=5A
Gate Threshold Voltage
VDS=VGS, ID=250uA
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=150oC)
Gate-Source Leakage
Total Gate Charge3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time3
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
VDS=10V, ID=5A
VDS=600V, VGS=0V
VDS=480V, VGS=0V
VGS=±30V
ID=10A
VDS=520V
VGS=10V
VDD=320V
ID=10A
RG=10Ω,VGS=10V
RD=32Ω
VGS=0V
Output Capacitance
Reverse Transfer Capacitance
VDS=15V
f=1.0MHz
650 - - V
- 0.6 - V/
- - 1Ω
2 - 4V
- 4.8 -
S
- - 10 uA
- - 100 uA
- - ±100 nA
- 53 - nC
- 10 - nC
- 15 - nC
- 16 - ns
- 20 - ns
- 82 - ns
- 36 - ns
- 2770 - pF
- 320 -
-8-
pF
pF
Source-Drain Diode
Symbol
VSD
trr
Parameter
Forward On Voltage3
Reverse Recovery Time
Qrr Reverse Recovery Charge
Test Conditions
IS=10A, VGS=0V
IS=10A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.5 V
- 610 - ns
- 8.64 - µC
Notes:
1.Pulse width limited by safe operating area.
2.Starting Tj=25oC , VDD=50V , L=1.2mH , RG=25Ω , IAS=10A.
3.Pulse width <300us , duty cycle <2%.
2/4
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14
12
T C =25 o C
10
10V
6.0V
8
6
5.0V
4
2
V G =4.0V
0
0 5 10 15 20
V DS , Drain-to-Source Voltage (V)
25
Fig 1. Typical Output Characteristics
1.2
1.1
1
0.9
0.8
-50 0 50 100 150
T j , Junction Temperature ( o C)
Fig 3. Normalized BVDSS v.s. Junction
Temperature
100
10
T j = 150 o C
1
T j = 25 o C
0.1
0.01
0.1
0.3 0.5 0.7 0.9 1.1 1.3
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.5
AP2761I-A
8
T C =150 o C
6
4
10V
5.0V
4.5V
2 V G =4.0V
0
0 5 10 15 20 25
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.8
2.4 I D =5A
V G =10V
2
1.6
1.2
0.8
0.4
0
-50 0
50 100
T j , Junction Temperature ( o C )
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
5
150
4
3
2
1
0
-50 0 50 100 150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
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AP2761I-A
16
I D =10A
12
V DS =330V
V DS =410V
V DS =520V
8
4
0
0 10 20 30 40 50 60 70 80
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
100
10
1ms
1 10ms
0.1
T c =25 o C
Single Pulse
100ms
1s
DC
0.01
0.1
1 10 100 1000
V DS , Drain-to-Source Voltage (V)
10000
Fig 9. Maximum Safe Operating Area
VDS
90%
10%
VGS
td(on) tr
td(off) tf
f=1.0MHz
10000
C iss
C oss
100
C rss
1
1 5 9 13 17 21 25 29
V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
10V
QGS
QG
QGD
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4/4
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