25N40 Datasheet PDF - Unisonic Technologies


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25N40
Unisonic Technologies

Part Number 25N40
Description N-CHANNEL POWER MOSFET
Page 6 Pages

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UNISONIC TECHNOLOGIES CO., LTD
25N40
Preliminary
400V, 26A N-CHANNEL
POWER MOSFET
„ DESCRIPTION
The UTC 25N40 is an N-channel mode power MOSFET using
UTC’s advanced technology to provide customers with planar stripe
and DMOS technology. This technology allows a minimum on-state
resistance and superior switching performance. It also can withstand
high energy pulse in the avalanche and commutation mode.
The UTC 25N40 is generally applied in high efficiency switch
mode power supplies.
„ FEATURES
* RDS(ON)=0.16@ VGS=10V,ID=13A
* Low Gate Charge (Typical 48nC)
* Low CRSS (Typical 30pF)
* High Switching Speed
„ SYMBOL
2.Drain
Power MOSFET
1.Gate
3.Source
„ ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
25N40L-T47-T
25N40G-T47-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-247
Pin Assignment
123
GDS
Packing
Tube
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
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25N40
Preliminary
Power MOSFET
„ ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) (Note 5)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain to Source Voltage
Gate-Source Voltage
VDSS
VGSS
400 V
±30 V
Drain Current (Note 5) Continuous
TC=25°C
TC=100°C
Pulsed (Note 2)
ID
IDM
26 A
15.6 A
104 A
Avalanche Current (Note 2)
IAR 26 A
Avalanche Energy
Single Pulsed (Note 3)
Repetitive (Note 2)
EAS
EAR
1352
26.5
mJ
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5 V/ns
Power Dissipation (TC=25°C)
Derate above 25°C
PD
297 W
2.4 W/°C
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating; Pulse width limited by maximum junction temperature.
3. L=4mH, IAS=26A. VDD=50V, RG=25, Starting TJ=25°C
4. ISD26A, di/dt200A/µs, VDDBVDSS, Starting TJ=25°C
5. Drain current limited by maximum junction temperature
„ THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJC
RATINGS
40
0.42
UNIT
°C/W
°C/W
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25N40
Preliminary
Power MOSFET
„ ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain-Source Leakage Current
Gate- Source Leakage Current
Forward
Reverse
BVDSS
BVDSS/TJ
IDSS
IGSS
ID=250µA, VGS=0V, TJ=150°C
Reference to 25°C, ID=250µA
VDS=400V, VGS=0V,
VGS=+30V, VDS=0V
VGS=-30V , VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VGS=VDS, ID=250µA
Static Drain-Source On-State Resistance
RDS(ON) VGS=10V, ID=13A
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
CISS
COSS
VDS=25, VGS=0V, f=1.0MHz
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
Gate to Source Charge
Gate to Drain ("Miller") Charge
QG
QGS
QGD
VDS=320V, VGS=10V, ID=26A
(Note 1, 2)
Turn-ON Delay Time
tD(ON)
Rise Time
Turn-OFF Delay Time
tR
tD(OFF)
VDD=200V, ID=26A, RG=25
(Note 1, 2)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD ISD=26A, VGS=0V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr ISD=26A, VGS=0V,
QRR dIF/dt=100A/µs (Note 1)
Notes: 1. Pulse Test: Pulse width300µs; Duty Cycle2%.
2. Essentially Independent of Operating Temperature Typical Characteristics
MIN TYP MAX UNIT
400 V
0.5 V/°C
1 µA
+100 nA
-100 nA
2.0 4.0 V
0.11 0.16
2400 3185
390 520
30 45
pF
pF
pF
48 60
15
20
45 100
100 210
115 240
66 140
nC
nC
nC
ns
ns
ns
ns
26
104
1.4
406
5.17
A
A
V
ns
µC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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25N40
Preliminary
„ TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
-
+
VDS
-
L
Power MOSFET
RG
VGS
Same Type
as D.U.T.
Driver
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
VDD
VGS
(Driver)
ISD
(D.U.T.)
VDS
(D.U.T.)
Peak Diode Recovery dv/dt Test Circuit
P.W.
Period
P. W.
D= Period
VGS= 10V
IFM, Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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