20UT04 Datasheet PDF - Vishay

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20UT04
Vishay

Part Number 20UT04
Description High Performance Schottky Generation
Page 7 Pages


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20UT04, 20WT04FN
Vishay High Power Products
High Performance
Schottky Generation 5.0, 20 A
20UT04
20WT04FN
Base
cathode
4
13
Anode 2 Anode
Cathode
I-PAK (TO-251AA)
Base
cathode
4
2
1 Cathode 3
Anode
Anode
D-PAK (TO-252AA)
FEATURES
• 175 °C high performance Schottky diode
• Very low forward voltage drop
• Extremely low reverse leakage
• Optimized VF vs. IR trade off for high efficiency
• Increased ruggedness for reverse avalanche capability
• RBSOA available
• Negligible switching losses
• Submicron trench technology
• Full lead (Pb)-free and RoHS compliant devices
• Qualified for AEC Q101
PRODUCT SUMMARY
IF(AV)
VRRM
Maximum VF at 20 A at 125 °C (1)
Note
(1) Measured connecting 2 anode pins
20 A
45 V
0.530 V
APPLICATIONS
• Specific for PV cells bypass diode
• High efficiency SMPS
• Automotive
• High frequency switching
• Output rectification
• Reverse battery protection
• Freewheeling
• Dc-to-dc systems
• Increased power density systems
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MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VRRM
VF
20 Apk, TJ = 125 °C
(typical, measured connecting 2 anode pins)
TJ Range
VALUES
45
0.480
- 55 to 175
UNITS
V
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
SYMBOL
VR
TEST CONDITIONS
TJ = 25 °C
20UT04
20WT04FN
45
UNITS
V
Document Number: 94573
Revision: 20-Jan-09
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
1



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20UT04, 20WT04FN
Vishay High Power Products
High Performance
Schottky Generation 5.0, 20 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum average forward current
IF(AV) 50 % duty cycle at TC = 153 °C, rectangular waveform
Maximum peak one cycle
non-repetitive surge current
5 µs sine or 3 µs rect. pulse
Following any rated load
IFSM condition and with rated
10 ms sine or 6 ms rect. pulse VRRM applied (1)
Non-repetitive avalanche energy
Repetitive avalanche current
EAS TJ = 25 °C, IAS = 7 A, L = 4.4 mH
Limited by frequency of operation and time pulse duration so
IAR that TJ < TJ max. IAS at TJ max. as a function of time pulse
Note
(1) Measured connecting 2 anode pins
VALUES
20
900
220
108
IAS at
TJ max.
UNITS
A
A
mJ
A
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Forward voltage drop
VFM (1, 2)
Reverse leakage current
IRM (1)
Junction capacitance
CT
Series inductance
LS
Maximum voltage rate of change
dV/dt
Notes
(1) Pulse width < 300 µs, duty cycle < 2 %
(2) Only 1 anode pin connected
TEST CONDITIONS
10 A
20 A
TJ = 25 °C
10 A
20 A
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
VR = Rated VR
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated VR
TYP.
0.505
0.570
0.415
0.520
-
-
1900
-
-
MAX. UNITS
0.540
0.610
0450
V
0.580
100 µA
7 mA
- pF
- nH
10 000 V/µs
www.DaTtaHShEeRet4MUA.coLm- MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and
storage temperature range
TJ, TStg
Maximum thermal resistance,
junction to case
RthJC DC operation
Typical thermal resistance,
case to heatsink
RthCS
TEST CONDITIONS
Approximate weight
Marking device
Case style I-PAK
Case style D-PAK
VALUES
- 55 to 175
UNITS
°C
1.2
°C/W
0.3
2g
0.07 oz.
20UT04
20WT04FN
www.vishay.com
2
For technical questions, contact: diodes-tech@vishay.com
Document Number: 94573
Revision: 20-Jan-09



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20UT04, 20WT04FN
High Performance
Vishay High Power Products
Schottky Generation 5.0, 20 A
100
Tj = 175°C
10
Tj = 125°C
100
10
1
0.1
0.01
0.001
175°C
150°C
125°C
100°C
75°C
50°C
25°C
0.0001
0
5 10 15 20 25 30 35 40 45
Reverse Voltage-VR(V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
10000
Tj = 25°C
1000
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
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Forward Voltage Drop-VFM(V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
100
0 5 10 15 20 25 30 35 40 45
Reverse Voltage-VR(V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
D = 0.75
D = 0.5
1 D = 0.33
D = 0.25
D = 0.2
0.1
Single Pulse
(Thermal Resistance)
0.01
1E-05
1E-04
1E-03
1E-02
1E-01
t1,RectangularPulseDuration(Seconds)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
1E+00
Document Number: 94573
Revision: 20-Jan-09
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
3



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20UT04, 20WT04FN
Vishay High Power Products
High Performance
Schottky Generation 5.0, 20 A
180
170 DC
160
150
140
Square wave (D=0.50)
80% rated Vr applied
130
see note (1)
120
0
5 10 15 20 25 30
AverageForwardCurrent-IF(AV)(A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
1000
20
180°
120°
90°
15 60°
30°
RMS Limit
10
DC
5
0
0 5 10 15 20 25 30
AverageForwardCurrent-IF(AV)(A)
Fig. 6 - Forward Power Loss Characteristics
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100
10
100
1000
10000
SquareWavePulseDuration-tp(microsec)
Fig. 7 - Maximum Non-Repetitive Surge Current
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
www.vishay.com
4
For technical questions, contact: diodes-tech@vishay.com
Document Number: 94573
Revision: 20-Jan-09



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