20N50E Datasheet PDF - ON Semiconductor

www.Datasheet-PDF.com

20N50E
ON Semiconductor

Part Number 20N50E
Description MTW20N50E
Page 8 Pages


20N50E datasheet pdf
Download PDF for PC
20N50E pdf
View PDF for Mobile


No Preview Available !

MTW20N50E
Preferred Device
Power MOSFET
20 Amps, 500 Volts
N–Channel TO–247
This high voltage MOSFET uses an advanced termination scheme
to provide enhanced voltage–blocking capability without degrading
performance over time. In addition, this advanced Power MOSFET is
designed to withstand high energy in the avalanche and commutation
modes. The new energy efficient design also offers a drain–to–source
diode with a fast recovery time. Designed for high voltage, high speed
switching applications in power supplies, converters and PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are critical
and offer additional safety margin against unexpected voltage
transients.
Robust High Voltage Termination
Avalanche Energy Specified
Source–to–Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
Isolated Mounting Hole Reduces Mounting Hardware
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value
Drain–Source Voltage
Drain–Gate Voltage (RGS = 1.0 M)
Gate–Source Voltage
– Continuous
– Non–Repetitive (tp 10 ms)
Drain Current – Continuous
Drain Current – Continuous @ 100°C
Drain Current – Single Pulse (tp 10 µs)
Total Power Dissipation
Derate above 25°C
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
500
500
± 20
± 40
20
14.1
60
250
2.0
Operating and Storage Temperature Range TJ, Tstg –55 to
150
Single Pulse Drain–to–Source Avalanche
Energy – Starting TJ = 25°C
(VDD = 100 Vdc, VGS = 10 Vdc,
IL = 20 Apk, L = 10 mH, RG = 25 )
Thermal Resistance – Junction to Case
Thermal Resistance – Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes, 1/8from case for 10 seconds
EAS
RθJC
RθJA
TL
2000
0.50
40
260
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
Watts
W/°C
°C
mJ
°C/W
°C
http://onsemi.com
20 AMPERES
500 VOLTS
RDS(on) = 240 m
N–Channel
D
G
1
23
S
4
TO–247AE
CASE 340K
Style 1
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
MTW20N50E
LLYWW
1
Gate
3
Source
2
Drain
LL = Location Code
Y = Year
WW = Work Week
ORDERING INFORMATION
Device
Package
Shipping
MTW20N50E
TO–247
30 Units/Rail
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2000
November, 2000 – Rev. 5
1
Publication Order Number:
MTW20N50E/D

20N50E datasheet pdf
Download PDF for PC
20N50E pdf
View PDF for Mobile


Related : Start with 20N50 Part Numbers by
20N50 N-Channel MOSFETS 20N50
OGFD
20N50 pdf
20N50 N-CHANNEL POWER MOSFET 20N50
UTC
20N50 pdf
20N50 N-Channel Power MOSFET 20N50
nELL
20N50 pdf
20N50 FDP20N50 20N50
Fairchild Semiconductor
20N50 pdf
20N50C1 HGTH20N50C1 20N50C1
Intersil Corporation
20N50C1 pdf
20N50E MTW20N50E 20N50E
ON Semiconductor
20N50E pdf

Index :   0   1   2   3   4   5   6   7   8   9   A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   U   V   W   X   Y   Z   NEW   

Since 2010   ::   HOME   ::   Contact