20N50 Datasheet PDF - nELL

www.Datasheet-PDF.com

20N50
nELL

Part Number 20N50
Description N-Channel Power MOSFET
Page 7 Pages


20N50 datasheet pdf
Download PDF
20N50 pdf
View PDF for Mobile

No Preview Available !

SEMICONDUCTOR
20N50 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET
(20A, 500Volts)
DESCRIPTION
The Nell 20N50 is a three-terminal silicon
device with current conduction capability
of 20A, fast switching speed, low on-state
resistance, breakdown voltage rating of 500V,
and max. threshold voltage of 5 volts.
They are designed for use in applications
such as switched mode power supplies, DC
to DC converters, motor control circuits, UPS
and general purpose switching applications.
D
G
D
S
TO-3PB
(20N50B)
D (Drain)
FEATURES
RDS(ON) = 0.23Ω@VGS = 10V
Ultra low gate charge(60nC max.)
Low reverse transfer capacitance
(CRSS = 27pF typical)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
150°C operation temperature
G
(Gate)
S (Source)
PRODUCT SUMMARY
ID (A)
VDSS (V)
RDS(ON) (Ω)
QG(nC) max.
20
500
0.23 @ VGS = 10V
60
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
VDSS
Drain to Source voltage
TJ=25°C to 150°C
VDGR
Drain to Gate voltage
RGS=20KΩ
VGS Gate to Source voltage
ID Continuous Drain Current
TC=25°C
TC=100°C
IDM Pulsed Drain current(Note 1)
IAR Avalanche current(Note 1)
EAR Repetitive avalanche energy(Note 1)
IAR=20A, RGS=50Ω, VGS=10V
dv/dt
Peak diode recovery dv/dt(Note 2)
Total power dissipation
PD (Derating factor above 25°C)
TC=25°C
TJ
TSTG
TL
Operation junction temperature
Storage temperature
Maximum soldering temperature, for 10 seconds 1.6mm from case
Mounting torque, #6-32 or M3 screw
VALUE
500
500
±30
20
12.4
80
20
25
4.6
280 (2.3)
UNIT
V
A
mJ
V /ns
W(W/°C)
-55 to 150
-55 to 150
ºC
300
10 (1.1)
lbf.in (N.m)
Note: 1.Repetitive rating: pulse width limited by junction temperature.
2.ISD ≤ 20A, di/dt ≤ 200A/µs, VDD V(BR)DSS, starting TJ=25°C.
www.nellsemi.com
Page 1 of 7



No Preview Available !

SEMICONDUCTOR
THERMAL RESISTANCE
SYMBOL
PARAMETER
Rth(j-c)
Thermal resistance, junction to case
Rth(c-s)
Rth(j-a)
Thermal resistance, case to heatsink
Thermal resistance, junction to ambient
20N50 Series RRooHHSS
Nell High Power Products
TO-3P(B)
TO-3P(B)
Min.
Typ.
0.5
Max.
0.44
40
UNIT
ºC/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
Min.
V(BR)DSS
▲ ▲V(BR)DSS/ TJ
Drain to source breakdown voltage
Breakdown voltage temperature coefficient
ID = 250µA, VGS = 0V
ID = 250µA, referenced to 25°C
500
IDSS
Drain to source leakage current
VDS=500V, VGS=0V TC = 25°C
VDS=400V, VGS=0V TC=150°C
IGSS
Gate to source forward leakage current
Gate to source reverse leakage current
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
RDS(ON)
Static drain to source on-state resistance ID = 10A, VGS = 10V
VGS(TH)
gFS
Gate threshold voltage
Forward transconductance
VGS=VDS, ID=250μA
VDS=40V, ID=10A
3.0
CISS
Input capacitance
COSS
Output capacitance
VDS = 25V, VGS = 0V, f =1MHz
CRSS
Reverse transfer capacitance
td(ON)
Turn-on delay time
tr
td(OFF)
Rise time
Turn-off delay time
VDD = 250V, VGS = 10V, ID = 20A
RGS = 25Ω(Note 1, 2)
tf Fall time
QG
QGS
QGD
Total gate charge
Gate to source charge
Gate to drain charge (Miller charge)
VDD = 400V, VGS = 10V, ID = 20A
(Note 1, 2)
EAS
Single pulse avalanche energy(Note 3)
IAS= 20A, L=5.0mH
Typ.
0.5
0.20
24.6
2400
355
27
95
375
100
105
46
15
22
Max.
25
250
100
-100
0.23
5.0
3120
465
200
760
210
220
60
1110
UNIT
V
V/ºC
μA
nA
Ω
V
S
pF
ns
nC
mJ
SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
Min. Typ. Max. UNIT
VSD Diode forward voltage
ISD = 20A, VGS = 0V
1.4 V
Is (IsD)
Continuous source to drain current
Integral reverse P-N junction
diode in the MOSFET
D (Drain)
20
ISM Pulsed source current
G
(Gate)
S (Source)
trr Reverse recovery time
Qrr Reverse recovery charge
ISD = 20A, VGS = 0V,
dIF/dt = 100A/µs
Note: 1. Pulse test: Pulse width ≤ 300µs, duty cycle ≤ 2%.
2. Essentially independent of operating temperature.
3. IAS=20A, VDD=50V, L=5.0mH, RGS= 25Ω, starting TJ=25°C.
www.nellsemi.com
Page 2 of 7
A
80
500 ns
7.2 μC



No Preview Available !

SEMICONDUCTOR
ORDERING INFORMATION SCHEME
Current rating, ID
20 = 20A
MOSFET series
N = N-Channel
Voltage rating, VDS
50 = 500V
Package type
B = TO-3P(B)
20N50 Series RRooHHSS
Nell High Power Products
20 N 50 B
Gate charge test circuit & waveform
12V
200μF
50KΩ
300μF
VGS
Same Type
as D.U.T.
VDS
3mA
(D.U.T)
VGS
10V
Qgs
Qg
Qgd
RESISTIVE SWITCHING TEST CIRCUIT & WAVEFORM
10V
VDS
VGS
RG
RL
VDD
D.U.T.
VDS
90%
VGS 10%
td(ON)
tr td(OFF)
ton
tf
toff
www.nellsemi.com
Page 3 of 7



No Preview Available !

SEMICONDUCTOR
20N50 Series RRooHHSS
Nell High Power Products
UNCLAMPED INDUCTIVE SWITCHING & WAVEFORMS
10V
RG
tp
VDS
lD
L
D.U.T.
VDD
BVDSS
lAS
EAS =
1
2
LlAS2
BVDSS
BVDSS - VDD
VDD
lD(t)
tP
VDS(t)
Time
PEAK DIODE RECOVERY dv/dt TEST CIRCUIT & WAVEFORMS
D.U.T.
ISD
+
VDS
-
L
Driver
RG
VGS
Same Type
as DUT
* dv/dt controlled by RG
* lSD controlled by pulse period
VDD
VGS
(Driver)
lSD
(D.U.T)
VDS
(D.U.T)
D=
Gate Pulse Width
Gate Pulse Period
10V
lFM, Body Diode Forward Current
di/dt
lRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDD
Body Diode
Forward Voltage Drop
www.nellsemi.com
Page 4 of 7



20N50 datasheet pdf
Download PDF
20N50 pdf
View PDF for Mobile


Related : Start with 20N5 Part Numbers by
20N50 N-Channel MOSFETS 20N50
OGFD
20N50 pdf
20N50 N-CHANNEL POWER MOSFET 20N50
UTC
20N50 pdf
20N50 N-Channel Power MOSFET 20N50
nELL
20N50 pdf
20N50 FDP20N50 20N50
Fairchild Semiconductor
20N50 pdf
20N50C1 HGTH20N50C1 20N50C1
Intersil Corporation
20N50C1 pdf
20N50E MTW20N50E 20N50E
ON Semiconductor
20N50E pdf
20N561K OXIDE 20N561K
JOYIN
20N561K pdf

Index :   0   1   2   3   4   5   6   7   8   9   A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   U   V   W   X   Y   Z   

This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.
Since 2010   ::   HOME   ::   Contact