20N50 Datasheet PDF - UTC

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20N50
UTC

Part Number 20N50
Description N-CHANNEL POWER MOSFET
Page 5 Pages


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UNISONIC TECHNOLOGIES CO., LTD
20N50
20A, 500V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 20N50 is an N-channel MOSFET, it uses UTC’s
advanced technology to provide the customers with a minimum
on-state resistance, high switching speed and low leakage current,
etc.
The UTC 20N50 is suitable for switching regulator application,
etc.
FEATURES
* RDS(on) < 0.27@ VGS=10V, ID=10A
* High switching speed
* Low leakage current
SYMBOL
2.Drain
Power MOSFET
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
20N50L-T3P-T
20N50G-T3P-T
20N50L-T47-T
20N50G-T47-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-3P
TO-247
Pin Assignment
123
GD S
GD S
Packing
Tube
Tube
MARKING
www.unisonic.com.tw
Copyright © 2016 Unisonic Technologies Co., Ltd
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20N50
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
500
V
Gate-Source Voltage
Drain Current (Note 2)
Avalanche Current
Continuous
Pulsed
VGSS
ID
IDM
IAR
±30
20
80
20
V
A
A
A
Avalanche Energy
Single Pulsed (Note 3)
Repetitive (Note 4)
EAS
EAR
960 mJ
15 mJ
Power Dissipation (TC=25°C)
TO-247
TO-3P
PD
367 W
416 W
Channel Temperature
Storage Temperature Range
TCH
TSTG
150
-55 ~ +150
°C
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Ensure that the channel temperature does not exceed 150°C.
3. VDD=90V, Tch=25°C (initial), L=4.08mH, RG=25, IAR=20A.
4. Repetitive rating: pulse width limited by maximum channel temperature This transistor is an
electrostatic-sensitive device. Handle with care.
THERMAL DATA
PARAMETER
Junction to Ambient
TO-247
TO-3P
Junction to Case
TO-247
TO-3P
SYMBOL
θJA
θjC
RATINGS
40
30
0.34
0.3
UNIT
°С/W
°С/W
°С/W
°С/W
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20N50
Power MOSFET
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward
Reverse
Gate-Source Breakdown Voltage
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
SYMBOL
TEST CONDITIONS
BVDSS
IDSS
IGSS
V(BR)GSS
ID=10mA, VGS=0V
VDS=500V, VGS=0V
VGS=+30V, VDS=0V
VGS=-30V, VDS=0V
IG=±10µA, VDS=0V
VGS(TH)
RDS(ON)
VDS=10V, ID=1mA
VGS=10V, ID=10A
CISS
COSS
CRSS
VGS=0V, VDS=25V, f=1.0MHz
QG
QGS
QGD
tD(ON)
VGS=10V, VDD400V, ID=20A
MIN TYP MAX UNIT
500 V
100 µA
+10 µA
-10 µA
±30 V
2.0 4.0 V
0.21 0.27
3400
320
25
pF
pF
pF
70 nC
45 nC
25 nC
130 ns
Rise Time
tR
70 ns
Turn-OFF Delay Time
tD(OFF)
280 ns
Fall-Time
tF
70 ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
(Note)
IS
Maximum Body-Diode Pulsed Current
(Note)
ISM
Drain-Source Diode Forward Voltage
VSD IS=20A, VGS=0V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
tRR
QRR
IS=20A, VGS=0V, dIDR/dt=100A/µs
Note: Ensure that the channel temperature does not exceed 150°C.
20 A
80 A
1.7
1300
20
V
ns
µC
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www.unisonic.com.tw
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20N50
TYPICAL CHARACTERISTICS
Breakdown Voltage Variation vs. Temperature
1.2
1.1
1.0
0.9
0.8
-100
Note:
1. VGS=0V
2. ID=10mA
-50 0
50 100 150 200
Junction Temperature, TJ С)
Power MOSFET
On-Resistance Junction Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
Note:
1. VGS=10V
2. ID=10A
-50 0
50 100 150 200
Junction Temperature, TJ С)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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