20N50 Datasheet PDF - OGFD

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20N50
OGFD

Part Number 20N50
Description N-Channel MOSFETS
Page 7 Pages


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N-Channel MOSFETS
DESCRIPTION
The OGFD 20N50 is produced using advanced
planar stripe DMOS technology. This high density
process is especially tailored to minimize on-state
resistance.
These devices are particularly suited for low voltage
application such as cellular phone and notebook
computer power management and other battery
powered circuits where high-side switching and low
in-line power loss are needed in a very small outline
surface mount package.
20N50
V DSS
RDS(ON )
ID
500V 0.26Ω 20A
TO-3P
Features
• 20.0A,500V,RDS(ON)=0.26 Ω@VGS=10V
• Low gate charge (typical 70Nc)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Ordering Information
PART NUMBER PACKAGE BRAND
20N50
TO-3P
0GFD
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Absolute Maximum Ratings (TC=25, unless otherwise noted)
20N50
Symbol
Parameter
20N50
Units
VDSS
ID
IDM
PD
VGS
EAS
dv/dt
TJ and TSTG
Drain-to-Source Voltage
Continuous Drain Current
Pulsed Drain Current@VG=10V
Power Dissipation
Derating Factor above 25
Gate-to-Source Voltage
Single PulseAvalanche Energy (L=1mH, IAS=40A)C
Peak Diode Recovery dv/dt
Operating Junction and Storage Temperature Range
500
20
80
280
2.30
± 30
1110
4.5
-55 to 150
V
A
W
W/
V
mJ
V/ns
Thermal Resistance
Symbol
Parameter
Min. Typ. Max. Units Test Conditions
RθJC
RθCS
Junction-to-Case
Case-to-Sink Typ
-- -- 0.44
Water cooled heatsink, PD adjusted for
-- 0.24 --
a peak junction temperature of +175.
/W
RθJA
Junction-to-Ambient -- -- 40
1 cubic foot chamber, free air.
OFF Characteristics TJ=25unless otherwise specified
Symbol
BVDSS
I GSS
I D SS
Parameter
Min.
Drain-to-Source
Voltage
Breakdown
500
Gate-to-Source Forward Leakage --
Zero Gate Voltage Drain Current
--
Typ.
--
--
--
Max. Units Test Conditions
-- V VGS=0, ID=250uA
100 nA VDS=0V, VGS=30V
1 uA VDS=500V, VGS=0V
ON Characteristics TJ=25unless otherwise specified
Symbol
RD S(ON)
Parameter
Static
On-Resistance
Min.
Drain-to-Source
--
Typ.
0.21
Max
0.26
Uni
Test Conditions
ts
Ω VGS=10V,ID=10A
VGS(TH)
Gate Threshold Voltage, Figure 12. 2.0
--
4.0 V VDS=10V, ID=250uA
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20N50
Dynamic Characteristics Essentially independent of operating temperature
Symbol
Parameter
Min. Typ. Max. Units
Test Conditions
Ciss Input Capacitance
-- 2700 --
Coss Output Capacitance
-- 400 --
pF
VDS=25V,VGS=0V,
f=1.0MHZ
Crss
Reverse Transfer Capacitance
-- 40 340
Qg Total Gate Charge
-- 70 --
Qgs Gate-to-Source Charge
-- 18 -- nC
VDS=400V, VGS=10V,
I D=20A
Qgd
Gate-to-Drain (“Miller”) Charge
-- 35 --
Resistive Switching Characteristics Essentially independent of operating temperature
Symbol
Parameter
Min. Typ. Max. Units
Test Conditions
Td(ON)
Turn-on Delay Time
100 --
Trise
Td(OFF)
Rise Time
Turn-Off Delay Time
400 --
ns VDD=250V, ID= 20.0A
100 --
RG=25Ω
Tfall Fall Time
100 --
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Typical Characteristics
Top : 15.V0GVS
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
101 Bottom: 5.5 V
100
10-1
Notes :
1. 250µs Pulse Test
2. TC = 25
100 101
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
20N50
101
100
10-1
0
150
25
-55
Notes :
1. VDS = 50V
2. 250µ s Pulse Test
2468
VGS , Gate-Source Voltage [V]
10
Figure 2. Transfer Characteristics
1.0
0.8
VGS = 10V
0.6 VGS = 20V
0.4
0.2
Note : TJ = 25
0.0
0
10 20 30 40 50 60 70 80
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs
101
100
10-1
0.2
15025
Notes :
1. VGS = 0V
2. 250µ s Pulse Test
0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD , Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
6000
5000
4000
3000
2000
1000
100-1
Ciss
Coss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
? Notes :
Crss
1. VGS = 0 V
2. f = 1 MHz
100 101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
12
VDS = 100V
10
VDS = 250V
8 VDS = 400V
6
4
2
? Note : ID = 20 A
00 10 20 30 40 50 60 70 80
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
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