20N50 Datasheet PDF - OGFD

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20N50
OGFD

Part Number 20N50
Description N-Channel MOSFETS
Page 7 Pages


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N-Channel MOSFETS
DESCRIPTION
The OGFD 20N50 is produced using advanced
planar stripe DMOS technology. This high density
process is especially tailored to minimize on-state
resistance.
These devices are particularly suited for low voltage
application such as cellular phone and notebook
computer power management and other battery
powered circuits where high-side switching and low
in-line power loss are needed in a very small outline
surface mount package.
20N50
V DSS
RDS(ON )
ID
500V 0.26Ω 20A
TO-3P
Features
• 20.0A,500V,RDS(ON)=0.26 Ω@VGS=10V
• Low gate charge (typical 70Nc)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Ordering Information
PART NUMBER PACKAGE BRAND
20N50
TO-3P
0GFD
www.goford.cn TEL0755-86350980 FAX0755-86350963

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