20N03L Datasheet PDF - Infineon Technologies

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20N03L
Infineon Technologies

Part Number 20N03L
Description IPD20N03L
Page 8 Pages


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OptiMOS® Buck converter series
Feature
N-Channel
Logic Level
Low On-Resistance RDS(on)
www.DataSheet4EU.xccoemllent Gate Charge x RDS(on) product (FOM)
Superior thermal resistance
175°C operating temperature
Avalanche rated
dv/dt rated
Ideal for fast switching buck converters
IPD20N03L
IPU20N03L
P- TO251 -3-1
Product Summary
VDS
30
RDS(on)
20
ID 30
V
m
A
P- TO252 -3-11
Type
IPD20N03L
IPU20N03L
Package
P- TO252 -3-11
P- TO251 -3-1
Ordering Code
Q67042-S4050
Q67042-S4106
Marking
20N03L
20N03L
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current1)
TC=25°C
ID
Value
30
30
Pulsed drain current
TC=25°C
Avalanche energy, single pulse
ID=15A, VDD=25V, RGS=25
Repetitive avalanche energy, limited by Tjmax2)
Reverse diode dv/dt
IS=30A, VDS=24V, di/dt=200A/µs, Tjmax=175°C
Gate source voltage
Power dissipation
TC=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
ID puls
EAS
EAR
dv/dt
VGS
Ptot
Tj , Tstg
120
15
6
6
±20
60
-55... +175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
Page 1
2003-01-17



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Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - case
www.DataSheeTt4hUe.crommal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 3)
IPD20N03L
IPU20N03L
Symbol
min.
Values
typ.
max.
Unit
RthJC
RthJA
RthJA
- 1.7 2.5 K/W
- - 100
- - 75
- - 50
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Static Characteristics
Drain-source breakdown voltage
VGS=0V, ID=1mA
Gate threshold voltage, VGS = VDS
ID=25µA
Zero gate voltage drain current
VDS=30V, VGS=0V, Tj=25°C
VDS=30V, VGS=0V, Tj=125°C
Gate-source leakage current
VGS=20V, VDS=0V
Drain-source on-state resistance
VGS=4.5V, ID=15A
Drain-source on-state resistance
VGS=10V, ID=15A
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
RDS(on)
min.
Values
typ.
max.
Unit
30 -
-V
1.2 1.6
2
µA
- 0.01
1
- 10 100
- 1 100 nA
- 22.9 31 m
- 15.5 20
1Current limited by bondwire ; with an RthJC = 2.5K/W the chip is able to carry ID= 42A at 25°C, for detailed
information see app.-note ANPS071E available at www.infineon.com/optimos
2Defined by design. Not subject to production test.
3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Page 2
2003-01-17



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Electrical Characteristics
Parameter
Dynamic Characteristics
Transconductance
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Input capacitance
Output capacitance
Reverse transfer capacitance
Gate resistance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Output charge
Gate plateau voltage
Reverse Diode
Inverse diode continuous
forward current
Inv. diode direct current, pulsed
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
IPD20N03L
IPU20N03L
Symbol
Conditions
Values
min. typ. max.
Unit
gfs
Ciss
Coss
Crss
RG
td(on)
tr
td(off)
tf
VDS2*ID*RDS(on)max,
ID=30A
VGS=0V, VDS=25V,
f=1MHz
VDD=15V, VGS=10V,
ID=15A,
RG=12.7
14 28
-S
- 530 700 pF
- 200 275
- 60 90
- 1.3
-
- 6.2 9.3 ns
- 11 17
- 23 34
- 18 27
Qgs
Qgd
Qg
VDD=15V, ID=15A
VDD=15V, ID=15A,
VGS=0 to 5V
Qoss
VDS=15V, ID=15A,
VGS=0V
V(plateau) VDD=15V, ID=15A
- 2.5 3.1 nC
- 6.4 9.6
- 8.4 11
- 8 10 nC
- 3.6
-V
IS
ISM
VSD
trr
Qrr
TC=25°C
VGS=0V, IF=30A
VR=15V, IF=lS,
diF /dt=100A/µs
- - 30 A
- - 120
- 1.1 1.4 V
- 15 18 ns
- 2 3 nC
Page 3
2003-01-17



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IPD20N03L
IPU20N03L
1 Power dissipation
Ptot = f (TC)
2 Drain current
ID = f (TC)
parameter: VGS10 V
65 IPD20N03L
W
55
www.DataSheet4U.com
50
45
40
35
30
25
20
15
10
5
0
0 20 40 60 80 100 120 140 160 °C 190
TC
3 Safe operating area
ID = f ( VDS )
parameter : D = 0 , TC = 25 °C
IPD20N03L
32
A
24
20
16
12
8
4
0
0 20 40 60 80 100 120 140 160 °C 190
TC
4 Max. transient thermal impedance
ZthJC = f (tp)
parameter : D = tp/T
10 3 IPD20N03L
A
10 2
10 1
10
0
10
-1
10 0
10 1 IPD20N03L
K/W
tp = 35.0µs
100 µs
1 ms
10 ms
DC
10 1 V 10 2
VDS
Page 4
10 0
10 -1
10 -2
10 -3
single pulse
D = 0.50
0.20
0.10
0.05
0.02
0.01
10
-4
10
-7
10 -6
10 -5
10 -4
10 -3
10 -2
s 10 0
tp
2003-01-17



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