20CUT10 Datasheet PDF - Vishay

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20CUT10
Vishay

Part Number 20CUT10
Description High Performance Schottky Generation
Page 7 Pages


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20CUT10, 20CWT10FN
Vishay High Power Products
High Performance
Schottky Generation 5.0, 2 x 10 A
20CUT10
20CWT10FN
Base
common
cathode
4
Base
common
cathode
4
13
Anode 2 Anode
Common
cathode
I-PAK (TO-251AA)
2
1 Common 3
Anode cathode Anode
D-PAK (TO-252AA)
FEATURES
• 175 °C high performance Schottky diode
• Very low forward voltage drop
• Extremely low reverse leakage
• Optimized VF vs. IR trade off for high efficiency
• Increased ruggedness for reverse avalanche capability
• RBSOA available
• Negligible switching losses
• Submicron trench technology
• Fully lead (Pb)-free and RoHS compliant devices
• Qualified for AEC Q101
PRODUCT SUMMARY
IF(AV)
VRRM
Maximum VF at 10 A at 125 °C
2 x 10 A
100 V
0.66 V
APPLICATIONS
• High efficiency SMPS
• Automotive
• High frequency switching
• Output rectification
• Reverse battery protection
• Freewheeling
• Dc-to-dc systems
• Increased power density systems
MAJOR RATINGS AND CHARACTERISTICS
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SYMBOL
CHARACTERISTICS
VRRM
VF
TJ
10 Apk, TJ = 125 °C (typical, per leg)
Range
VALUES
100
0.615
- 55 to 175
UNITS
V
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
SYMBOL
VR
TEST CONDITIONS
TJ = 25 °C
20CUT10
20CWT10FN
100
UNITS
V
Document Number: 94651
Revision: 11-Dec-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
1



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20CUT10, 20CWT10FN
Vishay High Power Products
High Performance
Schottky Generation 5.0, 2 x 10 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum average
forward current
per leg
per device
IF(AV)
50 % duty cycle at TC = 159 °C, rectangular waveform
Maximum peak one cycle
non-repetitive surge current per leg
Non-repetitive avalanche
energy per leg
5 µs sine or 3 µs rect. pulse
Following any rated load
IFSM condition and with rated
10 ms sine or 6 ms rect. pulse VRRM applied
EAS TJ = 25 °C, IAS = 3 A, L = 12 mH
Repetitive avalanche current per leg
IAR
Limited by frequency of operation and time pulse duration so
that TJ < TJ max. IAS at TJ max. as a function of time pulse
(see fig. 8)
VALUES
10
20
610
110
54
IAS at
TJ max.
UNITS
A
A
mJ
A
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Forward voltage drop per leg
VFM (1)
Reverse leakage current per leg
IRM (1)
Junction capacitance per leg
CT
Series inductance per leg
LS
Maximum voltage rate of change
dV/dt
Notes
(1) Pulse width < 300 µs, duty cycle < 2 %
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TEST CONDITIONS
10 A
20 A
TJ = 25 °C
10 A
20 A
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
VR = Rated VR
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated VR
TYP.
0.735
0.840
0.615
0.730
-
-
400
8.0
-
MAX. UNITS
0.810
0.890
0.660
V
0.770
50 µA
4 mA
- pF
- nH
10 000 V/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and
storage temperature range
Maximum thermal resistance,
junction to case per leg
Maximum thermal resistance,
junction to case per device
TJ, TStg
RthJC DC operation
Typical thermal resistance,
case to heatsink
RthCS
TEST CONDITIONS
Approximate weight
Marking device
Case style I-PAK
Case style D-PAK
VALUES
- 55 to 175
UNITS
°C
2
1 °C/W
0.3
0.3 g
0.01 oz.
20CUT10
20CWT10FN
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2
For technical questions, contact: diodes-tech@vishay.com
Document Number: 94651
Revision: 11-Dec-08



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20CUT10, 20CWT10FN
High Performance
Vishay High Power Products
Schottky Generation 5.0, 2 x 10 A
100
Tj = 175°C
10
Tj = 125°C
100
10
1
0.1
0.01
0.001
175°C
150°C
125°C
100°C
75°C
50°C
25°C
0.0001
0
20 40 60 80
Reverse Voltage-VR(V)
100
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
Tj = 25°C
100
1
0.2
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0.4 0.6 0.8 1.0 1.2 1.4 1.6
Forward Voltage Drop-VFM(V)
1.8
Fig. 1 - Maximum Forward Voltage Drop Characteristics
10
0
20 40 60 80 100
Reverse Voltage-VR(V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
D = 0.75
D = 0.5
1
D = 0.33
D = 0.25
D = 0.2
0.1
Single Pulse
(Thermal Resistance)
0.01
1E-05
1E-04
1E-03
1E-02
1E-01
t1,RectangularPulseDuration(Seconds)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
1E+00
Document Number: 94651
Revision: 11-Dec-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
3



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20CUT10, 20CWT10FN
Vishay High Power Products
High Performance
Schottky Generation 5.0, 2 x 10 A
180
175
170
DC
165
160
155 Square wave (D=0.50)
80% rated Vr applied
150
see note (1)
145
0 2 4 6 8 10 12 14 16
AverageForwardCurrent-IF(AV)(A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
1000
10
180°
120°
8 90°
60°
30°
6
RMS Limit
4
DC
2
0
0 3 6 9 12 15
AverageForwardCurrent-IF(AV)(A)
Fig. 6 - Forward Power Loss Characteristics
100
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10
10
100
1000
10000
SquareWavePulseDuration-tp(microsec)
Fig. 7 - Maximum Non-Repetitive Surge Current
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
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4
For technical questions, contact: diodes-tech@vishay.com
Document Number: 94651
Revision: 11-Dec-08



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