1N6097 Datasheet PDF - GeneSiC

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1N6097
GeneSiC

Part Number 1N6097
Description Silicon Power Schottky Diode
Page 3 Pages


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Silicon Power
Schottky Diode
Features
• High Surge Capability
• Types from 30 V to 40V VRRM
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
2. Reverse polarity (R): Stud is anode.
3. Stud is base.
1N6097 thru 1N6098R
VRRM = 30 V - 40 V
IF(AV) = 50 A
DO-5 Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
1N6097 (R)
1N6098 (R)
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
VRRM
VRMS
VDC
Tj
Tstg
30
21
30
-55 to 150
-55 to 150
40
28
40
-55 to 150
-55 to 150
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
1N6097 (R)
Average forward current (per
pkg)
Peak forward surge current
(per leg)
Maximum instantaneous
forward voltage (per leg)
Maximum instantaneous
reverse current at rated DC
blocking voltage (per leg)
Thermal characteristics
Maximum thermal resistance,
junction - case (per leg)
Mounting torque
IF(AV)
IFSM
VF
IR
RΘJC
Inch ponds
(in-pb)
TC = 125 °C
tp = 8.3 ms, half sine
IFM = 50 A, Tj = 25 °C
Tj = 25 °C
Tj = 100°C
Tj = 150 °C
50
800
0.7
1
10
20
1.30
30
1N6098 (R)
50
800
0.7
1
10
20
1.30
30
Unit
V
V
V
°C
°C
Unit
A
A
V
mA
°C/W
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1N6097 thru 1N6098R
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1N6097 thru 1N6098R
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
M DO- 5 (DO-203AB)
J
K
P
D
G
FE
C
A
B
N
Inches
Millimeters
Min
A
B 0.669
C -----
D -----
E 0.422
F 0.115
G -----
J -----
K 0.236
M -----
N -----
P 0.140
Max Min
1/4 –28 UNF
0.687
17.19
0.794
-----
1.020
-----
0.453
10.72
0.200
2.93
0.460
-----
0.280
-----
----- 6.00
0.589
-----
0.063
-----
0.175
3.56
Max
17.44
20.16
25.91
11.50
5.08
11.68
7.00
-----
14.96
1.60
4.45
www.genesicsemi.com/silicon-products/schottky-rectifiers/
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