1N60 Datasheet PDF - HAOHAI

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1N60
HAOHAI

Part Number 1N60
Description N-Channel MOSFET
Page 6 Pages


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1.3A, 600V, N沟道 场效应晶体管 产品参数规格书
工业型号
公司型号 通俗命名
H
FQU1N60C
FQD1N60C
H1N60U
H1N60D
1N60
HAOHAI
封装标识
U: TO-251
D: TO-252
1N60 Series
N-Channel MOSFET
包装方式
每管数量
每盒数量
条管装
载带卷盘
80/
2.5K/
4Kpcs/
5Kpcs/
每箱数量
24Kpcs
25Kpcs
 ■APPLICATION
  ELECTRONIC BALLAST
  ELECTRONIC TRANSFORMER
  SWITCH MODE POWER SUPPLY
ID=1.3A
VDS=600V
RDS(on)=13
 ■FEATURES
  LOW ON-RESISTANCE
  FAST SWITCHING
  HIGH INPUT RESISTANCE
  RoHS COMPLIANT
  Package: TO-251 and TO-252IPAK & DPAK
 ■特点
  导通电阻低、开关速度快、输入阻抗高、符合RoHS规范
 ■应用范围
  开关电源、LCD电源、LED驱动电源、机箱电源、UPS电源
  各种充电器、电子整流器、电子变压器、逆变器、控制器
  转换器、风扇控制板、
  以及电源适配器、汽车稳压器等线性放大和功率开关电路
 ■封装形式
  TO-251IPAK)、TO-252DPAK
1N60 Series Pin Assignment
3-Lead Plastic TO-251
Package Code: U
Pin 1: Gate
Pin 2: Drain
Pin 3: Source
3-Lead Plastic TO-252
Package Code: D
Pin 1: Gate
Pin 2: Drain
Pin 3: Source
2D
Series Symbol: 1 G
3S
最大额定 Absolute Maximum RatingsTC=25℃)
参数
PARAMETER
-源电压 Drain-source Voltage
-源电压 gate-source Voltage
漏极电流 Continuous Drain Current
TC=25
TC=100
最大脉冲电流 Drain Current Pulsed  ①
耗散功率 Power Dissipation (TL=25°C)
最高结温 Junction Temperature
存储温度 Storage Temperature
单脉冲雪崩能量 Single Pulse Avalanche Energy ②
  * 漏极电流由最高结温限制  (*Drain current limited by maximum junction temperature)
符号
SYMBOL
VDS
VGS
ID
IDM
PD
Tj
TSTG
EAS
额定值
VALUE
600
±30
1.0 *
0.6 *
4.0 *
28
150
-55~+150
14
单位
UNIT
V
A
W
mJ
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1.3A, 600V, N沟道 场效应晶体管 产品参数规格书
电特性 Electronic CharacteristicsTC=25℃)
参数
PARAMETER
符号
SYMBOL
-源击穿电压
Drain-source Breakdown Voltage
BVDSS
击穿电压温度系数
Breakdown Voltage Temperature Coefficient
ΔBVDSS/ΔTj
栅极开启电压
Gate Threshold Voltage
VGS(TH)
-源漏电流
Drain-source Leakage Current
IDSS
跨导
Forward Transconductance
gFS
测试条件
TEST CONDITION
VGS=0V, ID=250μA
ID=250uA
Referenced to 25
VGS=VDS, ID=250μA
VDS=600V
VGS=0V, Tj=25
VDS=480V
VGS=0V, Tj=125
VDS=40V, ID=0.5A ③
1N60 Series
N-Channel MOSFET
最小值 典型值 最大值
MIN TYP MAX
单位
UNIT
600 V
0.6 V/
2.0 4.0 V
25
μA
250
0.5 S
订货方式 ORDERING INFORMATION
包装形式
PACKING
TO-251 普通袋装 NORMAL PACKING
TO-251 条管装 TUBE PACKING
TO-252 条管装 TUBE PACKING
TO-252 载带卷盘装 TAPE & REEL PACKING
订货编码 ORDERING CODE
普通塑封料
Nomal Package Material
无卤塑封料
Halogen Free
H1N60U
H1N60U-PbF
H1N60U-TU
H1N60U-TU-PbF
H1N60D-TU
H1N60D-TU-PbF
H1N60D-TR
H1N60D-TR-PbF
包装规格 Packaging Specifications
TO-251  条管装,每管80只,每盒4000只,每箱24000(80Pcs/Tube, 4Kpcs/BOX, 24Kpcs/Carton)
TO-252
 条管装,每管80只,每盒4000只,每箱24000(80Pcs/Tube, 4Kpcs/BOX, 24Kpcs/Carton)
 每卷盘2500只,每盒5000只,每箱25000(2.5Kpcs/Reel, 5Kpcs/BOX, 25Kpcs/Carton)
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1N60C-UD-E2C



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1.3A, 600V, N沟道 场效应晶体管 产品参数规格书
Electrical CharacteristicsTC=25℃)
参数
PARAMETER
栅极漏电流
Gate-body Leakage Current (VDS=0)
-源导通电阻
Static Drain-source On Resistance
输入电容
Input Capacitance
关断延迟时间
Turn -Off Delay Time
栅极电荷
Total Gate Charge
栅源电荷
Gate-to-Source Charge
栅漏电荷
Gate-to-Drain Charge
二极管正向电流
Continuous Diode Forward Current
二极管正向压降
Diode Forward Voltage
反向恢复时间
Reverse Recovery Time
反向恢复电荷
Reverse Recovery Charge
符号
SYMBOL
IGSS
RDS(ON)
Ciss
Td(off)
Qg
QgS
Qgd
IS
VSD
Trr
Qrr
1N60 Series
N-Channel MOSFET
测试条件
TEST CONDITION
最小值 典型值 最大值
MIN TYP MAX
单位
UNIT
VGS=±30V
VGS=10V, ID=0.5A
VGS=0V, VDS=25V
F=1.0MHZ
VDD=300V, ID=1.0A
RG=25  ③
ID=1.0A
VDS=480V
VGS=10V
±100
nA
13 15
130 pF
13 nS
4.8
0.7 nC
2.7
Tj=25, IS=0.5A
VGS=0V  ③
Tj=25
IF=1.0A
di/dt=100A/μs
1.0 A
1.4 V
190 nS
0.53 μC
热特性 Thermal Characteristics
参数 PARAMETER
热阻结-环境 Thermal Resistance Junction-lead
热阻结-环境 Thermal Resistance Junction-ambient
 注释 (Notes):
  脉冲宽度:以最高节温为限制 (Repetitive rating: Pulse width limited by maximum junction temperature)
  初始结温 =25 , V DD =50V, L=30mH, R G =25, I AS =1.0A (Starting T j =25 , V DD =50V, L=30mH, R G =25, I AS =1.0A)
  脉冲测试 : 脉冲宽度≤ 300μs, 占空比≤ 2% (Pulse Test: Pulse width 300μs, Duty cycle 2%)
符号
SYMBOL
RthJL
RthJA
最大值
MAX
4.46
110
单位
UNIT
/W
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HAOHAI ELECTRONICS CO., LTD.
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致力於中國功率器件優秀供應商
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1N60C-UD-E2C



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1.3A, 600V, N沟道 场效应晶体管 产品参数规格书
1N60 Series
N-Channel MOSFET
■ 特性曲线 Typical Performance Characteristics
1: 输出特性曲线, TC=25
Fig1: Typical Output Characteristics, TC=25
2: 输出特性曲线, TC=150
Fig2: Typical Output Characteristics, TC=150
VDS, Drain-to-Source Voltage (V)
3: 归一化导通电阻与温度曲线图
Fig3: Normalized On-Resistance Vs.Temperature
VGS, Gate-to-Source Voltage (V)
4: 二极管正向电压曲线
Fig4: Typical Source-Drain Diode Forward Voltage
Tj, Junction Temperature ()
5: 最大漏极电流与壳温曲线
Fig5: Maximum Drain Current Vs.Case Temperature
VSD, Source to-Drain Voltage (V)
6: 最大安全工作区曲线
Fig6: Maximum Safe Operating Area
TC, Case Temperature ()
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VDS, Drain-Souree Voltage (V)
kkg@kkg.com.cn
1N60C-UD-E2C



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