1N1205A Datasheet PDF - Vishay

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1N1205A
Vishay

Part Number 1N1205A
Description Medium Power Silicon Rectifier Diodes
Page 6 Pages


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1N1...A, 1N36..A Series
Vishay High Power Products
Medium Power
Silicon Rectifier Diodes, 12 A
FEATURES
• Voltage ratings from 50 to 1000 V
• High surge capability
• Low thermal impedance
RoHS
COMPLIANT
• High temperature rating
• Can be supplied as JAN and JAN-TX devices in
accordance with MIL-S-19500/260
DO-203AA (DO-4)
• RoHS compliant
PRODUCT SUMMARY
IF(AV)
12 A
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IF(AV)
IFSM
I2t
TC
VRRM
Note
(1) JEDEC registered values
TC
50 Hz
60 Hz
50 Hz
60 Hz
Range
ELECTRICAL SPECIFICATIONS
VALUES
12 (1)
150 (1)
230
240 (1)
260
240
- 65 to 200
50 to 1000 (1)
VOLTAGE RATINGS
TYPE NUMBER (2)
VRRM, MAXIMUM
REPETITIVE PEAK
REVERSE VOLTAGE
V
VR(RMS), MAXIMUM RMS
REVERSE VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
1N1199A
TC = - 65 °C TO 200 °C
50 (1)
TC = - 65 °C TO 200 °C
35 (1)
TC = - 65 °C TO 200 °C
100 (1)
1N1200A
100 (1)
70 (1)
200 (1)
1N1201A
150 (1)
105 (1)
300 (1)
1N1202A
200 (1)
140 (1)
350 (1)
1N1203A
300 (1)
210 (1)
450 (1)
1N1204A
400 (1)
280 (1)
600 (1)
1N1205A
500 (1)
350 (1)
700 (1)
1N1206A
600 (1)
420 (1)
800 (1)
1N3670A
700 (1)
490
900 (1)
1N3671A
800 (1)
560
1000 (1)
1N3672A
900 (1)
630
1100 (1)
1N3673A
1000 (1)
700
1200 (1)
Notes
(1) JEDEC registered values
(2) Basic part number indicates cathode to case; for anode to case, add “R” to part number, e.g., 1N1199RA
UNITS
A
°C
A
A2s
°C
V
VRM, MAXIMUM DIRECT
REVERSE VOLTAGE
V
TC = - 65 °C TO 200 °C
50 (1)
100 (1)
150 (1)
200 (1)
300 (1)
400 (1)
500 (1)
600 (1)
700 (1)
800 (1)
900 (1)
1000 (1)
Document Number: 93493
Revision: 24-Jun-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
1



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1N1...A, 1N36..A Series
Vishay High Power Products
Medium Power
Silicon Rectifier Diodes, 12 A
FORWARD CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum average forward current
at case temperature
IF(AV) 180° sinusoidal conduction
Maximum peak one cycle
non-repetitive surge current
Half cycle 50 Hz sine wave
or 6 ms rectangular pulse Following any rated load
condition and with rated
Half cycle 60 Hz sine wave
or 5 ms rectangular pulse
VRRM applied
IFSM Half cycle 50 Hz sine wave
or 6 ms rectangular pulse Following any rated load
Half cycle 60 Hz sine wave
condition and with VRRM
applied following surge = 0
or 5 ms rectangular pulse
Maximum I2t for fusing
Maximum I2t for individual
device fusing
t = 10 ms
t = 8.3 ms
I2t
t = 10 ms
t = 8.3 ms
With rated VRRM applied
following surge,
initial TJ = 200 °C
With VRRM = 0 following
surge, initial TJ = 200 °C
Maximum I2t for individual
device fusing
I2t (2) t = 0.1 to 10 ms, VRRM = 0 following surge
Maximum forward voltage drop
VFM IF(AV) = 12 A (38 A peak), TC = 25 °C
VRRM = 50
VRRM = 100
VRRM = 150
VRRM = 200
VRRM = 300
Maximum average
reverse current
VRRM = 400
VRRM = 500
IR(AV) (3)
Maximum rated IF(AV) and TC
VRRM = 600
VRRM = 700
VRRM = 800
VRRM = 900
VRRM = 1000
Notes
(1) JEDEC registered values
(2) I2t for time tx = I2t x tx
(3) Maximum peak reverse current (IRM) under same conditions 2 x rated IR(AV)
VALUES
12 (1)
150 (1)
230
240 (1)
275
285
260
240
370
340
3715
1.35 (1)
3.0 (1)
2.5 (1)
2.25 (1)
2.0 (1)
1.75 (1)
1.5 (1)
1.25 (1)
1.0 (1)
0.9 (1)
0.8 (1)
0.7 (1)
0.6 (1)
UNITS
A
°C
A
A2s
A2s
V
mA
www.vishay.com
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For technical questions, contact: ind-modules@vishay.com
Document Number: 93493
Revision: 24-Jun-08



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1N1...A, 1N36..A Series
Medium Power
Vishay High Power Products
Silicon Rectifier Diodes, 12 A
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum operating case and
storage temperature range
TC, TStg
Maximum internal thermal
resistance, junction to case
RthJC DC operation
Thermal resistance,
case to sink
RthCS Mounting surface, smooth, flat and greased
minimum
maximum
Torque applied to nut; non-lubricated threads
Mounting torque
minimum
maximum
Torque applied to nut; lubricated threads
minimum
maximum
Torque applied to device case; lubricated threads
Approximate weight
Case style
Note
(1) JEDEC registered values
JEDEC
VALUES
- 65 to 200 (1)
UNITS
°C
2.0 (1)
0.5
°C/W
1.36 (12)
1.69 (15)
1.07 (9.45)
1.30 (11.55)
N·m
(lbf · in)
1.17 (10.35)
1.43 (12.65)
7.0 g
0.25 oz.
DO-203AA (DO-4)
Document Number: 93493
Revision: 24-Jun-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
3



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1N1...A, 1N36..A Series
Vishay High Power Products
Medium Power
Silicon Rectifier Diodes, 12 A
Fig. 1 - Average Forward Current vs.
Maximum Allowable Case Temperature
Fig. 4 - Maximum Forward Voltage vs. Forward Current
Fig. 2 - Maximum Low Level Forward Power Loss vs.
Average Forward Current
Fig. 5 - Maximum Transient Thermal Impedance,
Junction to Case vs. Pulse Duration
Fig. 3 - Maximum High Level Forward Power Loss vs.
Average Forward Current
Fig. 6 - Maximum Non-Repetitive 50 Hz Surge Current vs.
Number of Current Pulses
Dimensions
LINKS TO RELATED DOCUMENTS
http://www.vishay.com/doc?95311
www.vishay.com
4
For technical questions, contact: ind-modules@vishay.com
Document Number: 93493
Revision: 24-Jun-08



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