17NF25 Datasheet PDF - STMicroelectronics

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17NF25
STMicroelectronics

Part Number 17NF25
Description STI17NF25
Page 17 Pages


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STI17NF25 - STD17NF25
STF17NF25 - STP17NF25
N-channel 250V - 0.14- 17A - TO-220/FP - DPAK - I2PAK
Low gate charge STripFET™ II Power MOSFET
General features
Type
STD17NF25
STI17NF25
STF17NF25
STP17NF25
VDSS
250V
250V
250V
250V
RDS(on)
< 0.165
< 0.165
< 0.165
< 0.165
ID
17A
17A
17A
17A
PTOT
90W
90W
25W
90W
Low gate charge
100% avalanche tested
Exceptional dv/dt capability
Description
This Power MOSFET series realized with
STMicroelectronics unique STripFET™ process
has specifically been designed to minimize input
capacitance and gate charge. It is therefore
suitable as primary switch in advanced high-
efficiency isolated DC-DC converters.
Applications
Switching applications
3
2
1
TO-220
123
I²PAK
3
2
1
TO-220FP
3
1
DPAK
Internal schematic diagram
Order codes
Part number
STD17NF25
STI17NF25
STF17NF25
STP17NF25
February 2007
Marking
17NF25
17NF25
17NF25
17NF25
Package
DPAK
I²PAK
TO-220FP
TO-220
Rev 1
Packaging
Tape & reel
Tube
Tube
Tube
1/17
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Contents
Contents
STI17NF25 - STD17NF25 - STF17NF25 - STP17NF25
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
2/17



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STI17NF25 - STD17NF25 - STF17NF25 - STP17NF25
1 Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS
VGS
ID
ID
IDM(2)
PTOT
dv/dt(3)
Drain-source voltage (VGS = 0)
Gate-source voltage
Drain current (continuous) at TC = 25°C
Drain current (continuous) at TC=100°C
Drain current (pulsed)
Total dissipation at TC = 25°C
Derating factor
Peak diode recovery voltage slope
TJ Operating junction temperature
Tstg Storage temperature
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD 17A, di/dt 200A/µs, VDD < 80%V(BR)DSS
Value
TO-220
DPAK/I²PAK
TO-220FP
250
±20
17
10
68
90
0.72
10
17(1)
10(1)
68(1)
25
0.2
Unit
V
V
A
A
A
W
W/°C
V/ns
-55 to 150
°C
Table 2. Thermal data
Symbol
Parameter
Rthj-case
Rthj-amb
Tl
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering
purpose
1. When mounted on 1inch² FR-4, 2 Oz copper board
TO-220
I²PAK
DPAK
1.38
62.5
50 (1)
300
TO-220FP Unit
5 °C/W
62.5 °C/W
°C
Table 3. Avalanche data
Symbol
Parameter
IAR
Avalanche current, repetitive or not
repetitive (pulse width limited by Tjmax)
EAS
Single pulse avalanche energy (starting
Tj=25°C, ID=IAR, VDD=50V)
Value
17
100
Unit
A
mJ
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Electrical characteristics
STI17NF25 - STD17NF25 - STF17NF25 - STP17NF25
2 Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
V(BR)DSS
Drain-source breakdown
voltage
IDSS
Zero gate voltage drain
current (VGS = 0)
IGSS
Gate body leakage current
(VDS = 0)
VGS(th) Gate threshold voltage
RDS(on)
Static drain-source on
resistance
Test conditions
Min. Typ. Max. Unit
ID = 1mA, VGS= 0
250
VDS = Max rating,
VDS = Max rating,Tc=125°C
V
1 µA
10 µA
VGS = ±20V
±100 nA
VDS= VGS, ID = 250µA
VGS= 10V, ID= 8.5A
23 4V
0.14 0.165
Table 5. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
gfs (1)
Ciss
Coss
Crss
Coss eq
Qg
Qgs
Qgd
RG
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Gate input resistance
VDS = 15V, ID = 8.5A
VDS =25V, f=1 MHz, VGS=0
VGS=0, VDS =0V to 200V
VDD=200V, ID = 17A
VGS =10V
(see Figure 16)
f=1MHz gate DC bias=0 test
signal level=20mV open
drain
14
1000
178
28
135
29.5
4.8
15.6
2
S
pF
pF
pF
pF
nC
nC
nC
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
4/17



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