160N75F3 Datasheet PDF - STMicroelectronics


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160N75F3
STMicroelectronics

Part Number 160N75F3
Description N-channel MOSFET
Page 13 Pages

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STB160N75F3
STP160N75F3 - STW160N75F3
N-channel 75V - 3.5m- 120A - TO-220 - TO-247 - D2PAK
MDmesh™ low voltage Power MOSFET
TARGET SPECIFICATION
General features
Type
STB160N75F3
VDSS
75V
STP160N75F3
75V
STW160N75F3
75V
1. Current limited by package
Ultra low on-resistance
100% Avalanche tested
RDS(on)
4.2m
4.5m
4.5m
ID
120A (1)
120A (1)
120A (1)
Description
This N-channel enhancement mode Power
MOSFET is the latest refinement of
STMicroelectronics unique “Single Feature
Size™“strip-based process with less critical
alignment steps and therefore a remarkable
manufacturing reproducibility. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and low gate charge.
Applications
Switching application
3
2
1
TO-220
TO-247
3
1
D²PAK
Internal schematic diagram
Order codes
Part number
STB160N75F3
STP160N75F3
STW160N75F3
Marking
160N75F3
160N75F3
160N75F3
Package
D²PAK
TO-220
TO-247
Packaging
Tape & reel
Tube
Tube
February 2007
Rev 1
This is preliminary information on a new product foreseen to be developed. Details are subject to change without notice.
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Contents
Contents
STB160N75F3 - STP160N75F3 - STW160N75F3
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
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STB160N75F3 - STP160N75F3 - STW160N75F3
1 Electrical
ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS
VGS
ID (1)
ID (1)
IDM(2)
PTOT (3)
Drain-source voltage (VGS = 0)
Gate-source voltage
Drain current (continuous) at TC = 25°C
Drain current (continuous) at TC = 100°C
Drain current (pulsed)
Total dissipation at TC = 25°C
Derating factor
dv/dt Peak diode recovery voltage slope
EAS Single pulse avalanche energy
Tj Operating junction temperature
Tstg Storage temperature
1. Current limited by package
2. Pulse width limited by safe operating area
3. Rated according to Rthj-case
Table 2. Thermal resistance
Symbol
Parameter
Rthj-case Thermal resistance junction-case max
Rthj-amb Ther mal resistance junction-ambient max
Tl
Maximum lead temperature for soldering
purpose
Electrical ratings
Value
75
± 20
120
96
480
315
2.1
Tbd
Tbd
-55 to 175
Unit
V
V
A
A
A
W
W/°C
V/ns
mJ
°C
Value
0.48
62.5
300
Unit
°C/W
°C/W
°C
3/13



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Electrical characteristics
STB160N75F3 - STP160N75F3 - STW160N75F3
2 Electrical
characteristics
(TCASE=25°C unless otherwise specified)
Table 3. On/off states
Symbol
Parameter
Test conditions
Min. Typ. Max Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 250µA, VGS= 0
75 V
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = Max rating,
VDS = Max rating,@125°C
10 µA
100 µA
IGSS
VGS(th)
Gate body leakage
current
(VDS = 0)
Gate threshold voltage
VGS = ±20V
VDS= VGS, ID = 250µA
±200 nA
24 V
RDS(on)
Static drain-source on
resistance
VGS= 10V, ID= 60A
D²PAK
3.5 4.5 m
3.2 4.2 m
Table 4. Dynamic
Symbol
Parameter
Test conditions
gfs(1)
Forward
transconductance
VDS =15V, ID= 4.5A
ID = 10A
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =25V, f=1 MHz, VGS=0
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD=44V, ID = 60A
VGS =10V
(see Figure 2)
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Min Typ Max Unit
Tbd S
7000
1100
32
pF
pF
pF
110 Tbd nC
Tbd nC
Tbd nC
4/13




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