13N60N Datasheet PDF - KEC

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13N60N
KEC

Part Number 13N60N
Description KF13N60N
Page 6 Pages

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SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for switching mode
power supplies.
FEATURES
VDSS(Min.)= 600V, ID= 13A
Drain-Source ON Resistance :
RDS(ON)=0.56(Max.) @VGS =10V
Qg(typ.) =36nC
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
Drain-Source Voltage
Gate-Source Voltage
Drain Current
@TC=25
Pulsed
(Note1)
Single Pulsed Avalanche Energy (Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25
Derate above25
Maximum Junction Temperature
Storage Temperature Range
Thermal Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
SYMBOL RATING
VDSS
VGSS
ID
IDP
EAS
EAR
600
30
13
32
870
22.5
dv/dt
4.5
215
PD
1.72
Tj 150
Tstg -55 150
UNIT
V
V
A
mJ
mJ
V/ns
W
W/
RthJC
RthJA
0.58
40
/W
/W
KF13N60N
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
A
N
O
D
E
d
PP
123
Q
1. Gate
2. Drain
3. Source
B
K
DIM MILLIMETERS
A 15.60 +_ 0.20
B 4.80 +_ 0.20
C 19.90 +_ 0.20
D 2.00 +_ 0.20
d 1.00 +_ 0.20
E 3.00 +_ 0.20
F 3.80 +_ 0.20
G 3.50 +_ 0.20
H 13.90 +_ 0.20
I 12.76 +_ 0.20
J 23.40 +_ 0.20
M K 1.5+0.15-0.05
L 16.50 +_ 0.30
M 1.40 +_ 0.20
T N 13.60 +_ 0.20
O 9.60 +_ 0.20
P 5.45 +_ 0.30
Q 3.20 +_ 0.10
R 18.70 +_ 0.20
T 0.60+0.15-0.05
TO-3P(N)-E
D
G
S
Marking
1 KF13N60
N 801
2
1 PRODUCT NAME
2 LOT NO
2008. 10. 2
Revision No : 1
1/6
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