13N60N Datasheet PDF - KEC

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13N60N
KEC

Part Number 13N60N
Description KF13N60N
Page 6 Pages


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SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for switching mode
power supplies.
FEATURES
VDSS(Min.)= 600V, ID= 13A
Drain-Source ON Resistance :
RDS(ON)=0.56(Max.) @VGS =10V
Qg(typ.) =36nC
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
Drain-Source Voltage
Gate-Source Voltage
Drain Current
@TC=25
Pulsed
(Note1)
Single Pulsed Avalanche Energy (Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25
Derate above25
Maximum Junction Temperature
Storage Temperature Range
Thermal Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
SYMBOL RATING
VDSS
VGSS
ID
IDP
EAS
EAR
600
30
13
32
870
22.5
dv/dt
4.5
215
PD
1.72
Tj 150
Tstg -55 150
UNIT
V
V
A
mJ
mJ
V/ns
W
W/
RthJC
RthJA
0.58
40
/W
/W
KF13N60N
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
A
N
O
D
E
d
PP
123
Q
1. Gate
2. Drain
3. Source
B
K
DIM MILLIMETERS
A 15.60 +_ 0.20
B 4.80 +_ 0.20
C 19.90 +_ 0.20
D 2.00 +_ 0.20
d 1.00 +_ 0.20
E 3.00 +_ 0.20
F 3.80 +_ 0.20
G 3.50 +_ 0.20
H 13.90 +_ 0.20
I 12.76 +_ 0.20
J 23.40 +_ 0.20
M K 1.5+0.15-0.05
L 16.50 +_ 0.30
M 1.40 +_ 0.20
T N 13.60 +_ 0.20
O 9.60 +_ 0.20
P 5.45 +_ 0.30
Q 3.20 +_ 0.10
R 18.70 +_ 0.20
T 0.60+0.15-0.05
TO-3P(N)-E
D
G
S
Marking
1 KF13N60
N 801
2
1 PRODUCT NAME
2 LOT NO
2008. 10. 2
Revision No : 1
1/6
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KF13N60N
ELECTRICAL CHARACTERISTICS (Tc=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Static
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain Cut-off Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source ON Resistance
Dynamic
BVDSS
ID=250 A, VGS=0V
BVDSS/ Tj ID=250 A, Referenced to 25
IDSS VDS=600V, VGS=0V,
Vth VDS=VGS, ID=250 A
IGSS VGS= 30V, VDS=0V
RDS(ON)
VGS=10V, ID=6.5A
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay time
Turn-on Rise time
Turn-off Delay time
Turn-off Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
VDS=480V, ID=13A
VGS=10V
(Note4,5)
VDD=300V,
RG=25 ,
ID=13A
(Note4,5)
VDS=25V, VGS=0V, f=1.0MHz
Source-Drain Diode Ratings
Continuous Source Current
Pulsed Source Current
IS
VGS<Vth
ISP
Diode Forward Voltage
VSD IS=13A, VGS=0V
Reverse Recovery Time
Reverse Recovery Charge
trr IS=13A, VGS=0V,
Qrr dIs/dt=100A/ s
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L = 9.3mH, IAS=13A, VDD=50V, RG = 25 , Starting Tj = 25
Note 3) IS 13A, dI/dt 200A/ , VDD BVDSS, Starting Tj = 25 .
Note 4) Pulse Test : Pulse width 300 , Duty Cycle 2%.
Note 5) Essentially independent of operating temperature.
MIN. TYP. MAX. UNIT
600 - - V
- 0.63 - V/
- - 10 A
2.0 - 4.0 V
- - 100 nA
- 0.47 0.56
- 36 -
- 8.5 -
- 13.5 -
- 30 -
- 40 -
- 115 -
- 55 -
- 1445 -
- 185 -
- 20 -
nC
ns
pF
- - 13
A
- - 52
- 0.9 1.4 V
- 370 -
ns
- 4.6 -
C
2008. 10. 2
Revision No : 1
2/6
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KF13N60N
Fig1. ID - VDS
100
VGS=10V
10 VGS=6V
VGS=5V
1
0.1
0.1
1 10
Drain - Source Voltage VDS (V)
100
1.2
VGS = 0V
IDS = 250
1.1
Fig3. BVDSS - Tj
1.0
0.9
0.8
-100
-50 0 50 100
Junction Temperature Tj ( C )
150
Fig5. IS - VSD
102
100 C
25 C
101
100
10-1
0.4
0.6 0.8 1.0 1.2 1.4
Source - Drain Voltage VSD (V)
1.8
2008. 10. 2
Revision No : 1
VDS=20V
101
Fig2. ID - VGS
100
100 C
25 C
10-1
2
468
Gate - Source Voltage VGS (V)
10
Fig4. RDS(ON) - ID
1.2
1.0
VGS=6V
0.6
VGS=10V
0.2
0 5 10 15 20
Drain Current ID (A)
3.0
VGS =10V
IDS = 6A
2.5
Fig6. RDS(ON) - Tj
2.0
1.5
1.0
0.5
0.0
-100 -50 0 50 100
Junction Temperature Tj ( C)
150
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KF13N60N
Fig 7. C - VDS
104
Ciss
103
Coss
102
101
0
Crss
10 20 30 40
Drain - Source Voltage VDS (V)
Fig9. Safe Operation Area
102
100µs
101 1ms
100
Operation in this
area is limited by RDS(ON)
10ms
100ms
DC
10-1
Tc= 25 C
Tj = 150 C
102 Single pulse
100
101
102
Drain - Source Voltage VDS (V)
103
Fig8. Qg- VGS
12
ID=13A
10
8
VDS = 480V
VDS = 300V
VDS = 120V
6
4
2
0
0 5 10 15 20 25 30 35 40
Gate - Charge Qg (nC)
Fig10. ID - Tj
14
12
10
8
6
4
2
0
25 50 75 100 125 150
Junction Temperature Tj ( C)
100
Duty=0.5
Fig11. Transient Thermal Response Curve
0.2
10-1 0.1
0.05
0.02
0.01
10-2
10-5
Single Pulse
10-4
10-3 10-2
TIME (sec)
PDM
t1
t2
- Rth(j-c) = 0.58 C/W Max.
- Duty Factor, D= t1/t2
10-1 100 101
2008. 10. 2
Revision No : 1
4/6
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