12NK90Z Datasheet PDF - STMicroelectronics

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12NK90Z
STMicroelectronics

Part Number 12NK90Z
Description STW12NK90Z
Page 14 Pages


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STW12NK90Z
N-channel 900V - 0.72- 11A - TO-247
Zener-protected SuperMESH™ Power MOSFET
General features
Type
STW12NK90Z
VDSS
900V
RDS(on)
<0.88
ID pW
11A 230W
Extremely high dv/dt capability
100% avalanche tested
Gate charge minimized
Very low intrinsic capacitances
Very good manufacturing repeatibility
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Such series complements ST full range of high
voltage MOSFETs including revolutionary
MDmesh™ products.
Applications
Switching application
TO-247
Internal schematic diagram
Order codes
Part number
STW12NK90Z
Marking
W12NK90Z
Package
TO-247
Packaging
Tube
October 2006
Rev 5
1/14
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Contents
Contents
STW12NK90Z
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1 Protection features of gate-to-source zener diodes . . . . . . . . . . . . . . . . . . 4
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
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STW12NK90Z
1 Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS
VGS
ID
ID
IDM(1)
Ptot
Drain-source voltage (VGS = 0)
Gate- source voltage
Drain current (continuous) at TC = 25°C
Drain current (continuous) at TC = 100°C
Drain current (pulsed)
Total dissipation at TC = 25°C
Derating Factor
VESD(G-S)
EAS (2)
Tstg
Tj
Gate source ESD(HBM-C=100pF, R=1.5KΩ)
Single pulse avalanche energy
Storage temperature
Max. operating junction temperature
1. Pulse width limited by safe operating area.
2. ISD 11A, di/dt 200A/µs, VDD V(BR)DSS, Tj TJMAX.
Value
900
± 30
11
7
44
230
1.85
6000
4.5
-55 to 150
Unit
V
V
A
A
A
W
W/°C
V
mJ
°C
Table 2. Thermal data
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-ambient max
TJ Maximum lead temperature for soldering purpose
0.54 °C/W
50 °C/W
300 °C
Table 3. Avalanche characteristics
Symbol
Parameter
Avalanche current, repetitive or not-repetitive
IAR (pulse width limited by Tj max)
Single pulse avalanche energy
EAS (starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max value
11
500
Unit
A
mJ
Table 4. Gate-source zener diode
Symbol
Parameter
Test conditions
BVGSO
Gate-source breakdown
voltage
Igs=± 1mA (open drain)
Min. Typ. Max. Unit
30 V
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Electrical ratings
STW12NK90Z
1.1 Protection features of gate-to-source zener diodes
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
4/14



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