12N65 Datasheet PDF - Unisonic Technologies

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12N65
Unisonic Technologies

Part Number 12N65
Description N-CHANNEL POWER MOSFET
Page 8 Pages


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UNISONIC TECHNOLOGIES CO., LTD
12N65
12A, 650V N-CHANNEL
POWER MOSFET
„ DESCRIPTION
The UTC 12N65 are N-Channel enhancement mode power field
effect transistors (MOSFET) which are produced by using UTC’s
proprietary, planar stripe and DMOS technology.
These devices are suited for high efficiency switch mode power
supply. To minimize on-state resistance, provide superior switching
performance and withstand high energy pulse in the avalanche and
commutation mode, the advanced technology has been especially
tailored.
„ FEATURES
* RDS(ON) < 0.85@VGS = 10 V
* Ultra low gate charge ( typical 42 nC )
* Low reverse transfer capacitance ( CRSS = typical 25 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
„ SYMBOL
Power MOSFET
„ ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
12N65L-TA3-T
12N65G-TA3-T
12N65L-TF1-T
12N65G-TF1-T
12N65L-TF2-T
12N65G-TF2-T
12N65L-TF3-T
12N65G-TF3-T
12N65L-T2Q-T
12N65G-T2Q-T
12N65L-T3P-T
12N65G-T3P-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
TO-220F1
TO-220F2
TO-220F
TO-262
TO-3P
Pin Assignment
123
GDS
GDS
GDS
GDS
GDS
GDS
Packing
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Copyright © 2014 Unisonic Technologies Co., Ltd
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12N65
„ MARKING
Power MOSFET
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12N65
Power MOSFET
„ ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDSS 650 V
VGSS ±30 V
Avalanche Current (Note 2)
Drain Current
Continuous
Pulsed (Note 2)
Avalanche Energy
Single Pulsed (Note 3)
Repetitive (Note 2)
Peak Diode Recovery dv/dt (Note 4)
IAR
ID
IDM
EAS
EAR
dv/dt
12 A
12 A
48 A
790 mJ
24 mJ
4.5 V/ns
TO-220 / TO-262
225 W
Power Dissipation
TO-220F / TO-220F1
TO-220F2
PD
51 W
54 W
TO-3P
260 W
Junction Temperature
Operating Temperature
TJ
TOPR
+150
-55 ~ +150
°C
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 10mH, IAS = 12A, VDD = 50V, RG = 25, Starting TJ = 25°C
4. ISD 12A, di/dt 200A/s, VDD BVDSS Starting TJ = 25°C
„ THERMAL DATA
PARAMETER
TO-220/TO-220F
Junction to Ambient
TO-220F1/TO-220F2
TO-262
TO-3P
TO-220 / TO-262
Junction to Case
TO-220F/TO-220F1
TO-220F2
TO-3P
SYMBOL
θJA
θJC
RATING
62.5
40
0.56
2.43
2.31
0.48
UNIT
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
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12N65
Power MOSFET
„ ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS = 0 V, ID = 250 µA
Drain-Source Leakage Current
IDSS VDS = 650 V, VGS = 0 V
Gate-Source Leakage Current
IGSS VGS = ±30 V, VDS = 0 V
Breakdown Voltage Temperature Coefficient BVDSS/TJ ID=250µA,Referenced to 25°C
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
VGS(TH)
RDS(ON)
VDS = VGS, ID = 250μA
VGS = 10V, ID = 6.0A
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS = 25 V, VGS = 0 V,
f = 1MHz
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
tD(ON)
tR
tD(OFF)
tF
QG
QGS
QGD
VDD = 325V, ID = 12A,
RG = 25(Note 1, 2)
VDS= 520V,ID= 12A,
VGS= 10 V (Note 1, 2)
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD VGS = 0 V, IS = 12A
Maximum Continuous Drain-Source Diode
Forward Current
IS
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
Reverse Recovery Time
tRR VGS = 0 V, IS = 12A,
Reverse Recovery Charge
QRR dIF/dt = 100 A/µs (Note 1)
Notes: 1. Pulse Test : Pulse width 300μs, Duty cycle 2%
2. Essentially independent of operating temperature
MIN TYP MAX UNIT
650 V
1 µA
±100 nA
0.7 V/°C
2.0 4.0 V
0.65 0.85
1480 1900
200 270
25 35
pF
pF
pF
30 70
115 240
95 200
85 180
42 54
8.6
21
ns
ns
ns
ns
nC
nC
nC
1.4 V
12 A
48
380
3.5
A
ns
µC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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