10WT10FN Datasheet PDF - Vishay

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10WT10FN
Vishay

Part Number 10WT10FN
Description High Performance Schottky Generation
Page 7 Pages


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10UT10, 10WT10FN
Vishay High Power Products
High Performance
Schottky Generation 5.0, 10 A
10UT10
10WT10FN
Base
cathode
4
13
Anode 2 Anode
Cathode
I-PAK (TO-251AA)
Base
cathode
4
2
1 Cathode 3
Anode
Anode
D-PAK (TO-252AA)
FEATURES
• 175 °C high performance Schottky diode
• Very low forward voltage drop
• Extremely low reverse leakage
• Optimized VF vs. IR trade off for high efficiency
• Increased ruggedness for reverse avalanche capability
• RBSOA available
• Negligible switching losses
• Submicron trench technology
• Compliant to RoHS directive 2002/95/EC
• AEC-Q101 qualified
PRODUCT SUMMARY
IF(AV)
VRRM
Maximum VF at 10 A at 125 °C
10 A
100 V
0.66 V
APPLICATIONS
• High efficiency SMPS
• Automotive
• High frequency switching
• Output rectification
• Reverse battery protection
• Freewheeling
• Dc-to-dc systems
• Increased power density systems
MAJOR RATINGS AND CHARACTERISTICS
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SYMBOL
CHARACTERISTICS
VRRM
VF
TJ
10 Apk, TJ = 125 °C (typical)
Range
VALUES
100
0.615
- 55 to 175
UNITS
V
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
SYMBOL
VR
TEST CONDITIONS
TJ = 25 °C
10UT10
10WT10FN
100
UNITS
V
Document Number: 94647
Revision: 04-May-09
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
1



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10UT10, 10WT10FN
Vishay High Power Products
High Performance
Schottky Generation 5.0, 10 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum average forward current
IF(AV) 50 % duty cycle at TC = 159 °C, rectangular waveform
Maximum peak one cycle
non-repetitive surge current
5 µs sine or 3 µs rect. pulse
Following any rated load
IFSM condition and with rated
10 ms sine or 6 ms rect. pulse VRRM applied
Non-repetitive avalanche energy
Repetitive avalanche current
EAS TJ = 25 °C, IAS = 3 A, L = 12 mH
Limited by frequency of operation and time pulse duration so
IAR that TJ < TJ max. IAS at TJ max. as a function of time pulse
(see fig. 8)
Note
(1) Measured connecting 2 anode pins
VALUES
10
610
110
54
IAS at
TJ max.
UNITS
A
A
mJ
A
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Forward voltage drop
VFM (1)(2)
Reverse leakage current
IRM (1)
Junction capacitance
CT
Series inductance
LS
Maximum voltage rate of change
dV/dt
Notes
www.D(1a) tPaSulhseewt4idUt.hco<m300 µs, duty cycle < 2 %
(2) Only 1 anode pin connected
TEST CONDITIONS
5A
10 A
20 A
TJ = 25 °C
5A
10 A
20 A
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
VR = Rated VR
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated VR
TYP.
0.630
0.735
0.840
0.530
0.615
0.730
-
-
400
8.0
-
MAX. UNITS
-
0.810
0.890
-
V
0.660
0.770
50 µA
4 mA
- pF
- nH
10 000 V/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and
storage temperature range
TJ, TStg
Maximum thermal resistance,
junction to case
RthJC DC operation
Typical thermal resistance,
case to heatsink
RthCS
TEST CONDITIONS
Approximate weight
Marking device
Case style I-PAK
Case style D-PAK
VALUES
- 55 to 175
UNITS
°C
2
°C/W
0.3
0.3 g
0.01 oz.
10UT10
10WT10FN
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2
For technical questions, contact: diodes-tech@vishay.com
Document Number: 94647
Revision: 04-May-09



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10UT10, 10WT10FN
High Performance
Vishay High Power Products
Schottky Generation 5.0, 10 A
100
TJ = 175 °C
10
TJ = 125 °C
TJ = 25 °C
1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
VFM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
1000
100
10
1
0.1
0.01
0.001
175 °C
150 °C
125 °C
100 °C
75 °C
50 °C
25 °C
0.0001
0
20 40 60 80 100
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
100
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10
10
0
20 40 60 80 100
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
1
0.1
0.01
0.00001
Single pulse
(thermal resistance)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
0.0001
0.001
0.01
0.1
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
1
Document Number: 94647
Revision: 04-May-09
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
3



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10UT10, 10WT10FN
Vishay High Power Products
High Performance
Schottky Generation 5.0, 10 A
180
175
170
DC
165
160
155 Square wave (D = 0.50)
80 % rated VR applied
150
See note (1)
145
0 2 4 6 8 10 12 14 16
IF(AV) Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
1000
10
18
120°
8 90°
60°
30°
6
4
RMS limit
DC
2
0
0 3 6 9 12 15
IF(AV) - Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
100
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10
10
100
1000
10 000
tp - Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
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4
For technical questions, contact: diodes-tech@vishay.com
Document Number: 94647
Revision: 04-May-09



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