10NN15 Datasheet PDF - Unisonic Technologies

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10NN15
Unisonic Technologies

Part Number 10NN15
Description DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Page 3 Pages


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UNISONIC TECHNOLOGIES CO., LTD
10NN15
DUAL N-CHANNEL
ENHANCEMENT MODE POWER
MOSFET
DESCRIPTION
The UTC 10NN15 is a Dual N-channel enhancement mode
power MOSFET using UTC’s perfect technology to provide
customers with fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
FEATURES
* High switching speed
* Low Gate Charge
* Simple Drive Requirement
SYMBOL
Power MOSFET
SOP-8
ORDERING INFORMATION
Ordering Number
10NN15G-S08-R
Note: Pin Assignment: G: Gate D: Drain
Package
SOP-8
S: Source
Pin Assignment
1 2 3 4 5, 6 7, 8
S1 G1 S2 G2 D2 D1
Packing
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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10NN15
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
150
V
Gate-Source Voltage
VGSS
±20
V
Drain Current
Continuous (Note 3)
Pulsed (Note 2)
ID
IDM
3
12
A
A
Power Dissipation
PD 2 W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by Max. junction temperature.
3. Surface mounted on 1in2 copper pad of FR4 board, t10sec; 135°C/W when mounted on Min. copper pad.
THERMAL CHARACTERISTICS
PARAMETER
Junction to Ambient (Note 3)
SYMBOL
θJA
RATINGS
62.5
UNIT
°C/W
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate- Source Leakage Current
Forward
Reverse
BVDSS
IDSS
IGSS
ID=250µA, VGS=0V
VDS=150V, VGS=0V
VGS=+20V, VDS=0V
VGS=-20V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS=VGS, ID=250µA
Static Drain-Source On-State Resistance
RDS(ON) VGS=10V, ID=3A
DYNAMIC PARAMETERS
Input Capacitance
CISS
Output Capacitance
COSS
VGS=0V, VDS=25V, f=1.0MHz
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
QG
QGS
QGD
VGS=10V, VDS=120V, ID=3A
(Note 1, 2)
Turn-ON Delay Time
tD(ON)
Rise Time
Turn-OFF Delay Time
tR
tD(OFF)
VDS=75V, VGS=10V, ID=3A,
RG=3.3(Note 1, 2)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD IS=3A, VGS=0V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
tRR
QRR
IS=3A, VGS=0V, dIF/dt=100A/µs
Notes: 1. Pulse width 300µs, duty cycle 2%
2. Essentially independent of operating temperature
MIN TYP MAX UNIT
150 V
10 µA
+100 nA
-100 nA
2 4V
400 m
420 672
60
40
pF
pF
pF
10 16 nC
2 nC
4 nC
6.5 ns
7 ns
14 ns
35 ns
1.3 V
40 ns
75 µC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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10NN15
TYPICAL CHARACTERISTICS
Power MOSFET
Drain-Source On-State Resistance
Characteristics
2.5
VGS=10V, ID=2A
2.0
1.5
1.0
0.5
0
0
0.2
0.4 0.6
0.8
Drain to Source Voltage, VDS (V)
Body-Diode Continuous Current vs.
Source to Drain Voltage
2.0
1.5
1.0
0.5
0
0 0.2 0.4 0.6 0.8 1.0
Source to Drain Voltage, VSD (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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