10N70 Datasheet PDF - Unisonic Technologies

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10N70
Unisonic Technologies

Part Number 10N70
Description N-CHANNEL POWER MOSFET
Page 7 Pages


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UNISONIC TECHNOLOGIES CO., LTD
10N70
10A, 700V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 10N70 is a high voltage and high current power
MOSFET, designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and have a
high rugged avalanche characteristics. This power MOSFET is
usually used at high speed switching applications in power supplies,
PWM motor controls, high efficient DC to DC converters and bridge
circuits.
FEATURES
* RDS(ON) <1.2@ VGS = 10V, ID = 5A
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
10N70L-TF1-T
10N70G-TF1-T
10N70L-TF2-T
10N70G-TF2-T
10N70L-TF3-T
10N70G-TF3-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220F1
TO-220F2
TO-220F
Pin Assignment
123
GDS
GDS
GDS
Packing
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10N70
MARKING
Power MOSFET
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10N70
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDSS 700 V
VGSS ±30 V
Avalanche Current (Note 2)
Drain Current
Continuous
Pulsed (Note 2)
Avalanche Energy
Single Pulsed (Note 3)
Repetitive (Note 2)
Peak Diode Recovery dv/dt (Note 4)
IAR
ID
IDM
EAS
EAR
dv/dt
10 A
10 A
40 A
600 mJ
15.6 mJ
4.5 V/ns
Power Dissipation
Junction Temperature
PD 50 W
TJ
+150
°C
Operating Temperature
Storage Temperature
TOPR
TSTG
-55 ~ +150
-55 ~ +150
°C
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 12mH, IAS = 10A, VDD = 50V, RG = 25 Starting TJ = 25°C
4. ISD 9.5A, di/dt 200A/μs, VDD BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJC
RATING
62.5
2.5
UNIT
°C/W
°C/W
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10N70
Power MOSFET
ELECTRICAL CHARACTERISTICS( TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS = 0V, ID = 250μA
700
Drain-Source Leakage Current
IDSS VDS = 700V, VGS = 0V
Gate-Source Leakage Current
Forward
Reverse
IGSS
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
Breakdown Voltage Temperature Coefficient BVDSS/TJ ID = 250 µA, Referenced to 25°C
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
VGS(TH)
RDS(ON)
VDS = VGS, ID = 250μA
VGS = 10V, ID = 5A
2.0
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS=25V, VGS=0V, f=1.0 MHz
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
tD(ON)
tR
tD(OFF)
tF
QG
QGS
QGD
VDD=30V, ID =0.5A, RG =25
(Note 1, 2)
VDS=50V, ID=1.3A, VGS=10 V
IG = 100μA (Note 1, 2)
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
VSD VGS = 0 V, IS =10A
Maximum Continuous Drain-Source Diode
Forward Current
IS
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
Reverse Recovery Time
Reverse Recovery Charge
trr VGS = 0 V, IS = 10A,
QRR dIF / dt = 100 A/µs (Note 1)
Notes: 1. Pulse Test : Pulse width 300µs, Duty cycle 2%
2. Essentially independent of operating temperature.
TYP MAX UNIT
V
10 µA
100 nA
-100 nA
0.7 V/°C
4.0 V
1.2
890 pF
200 pF
65 pF
78 ns
200 ns
275 ns
180 ns
50 nC
10 nC
16 nC
1.4 V
10 A
40 A
420 ns
4.2 µC
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www.unisonic.com.tw
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