10N65K Datasheet PDF - Unisonic Technologies


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10N65K
Unisonic Technologies

Part Number 10N65K
Description N-CHANNEL POWER MOSFET
Page 6 Pages

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UNISONIC TECHNOLOGIES CO., LTD
10N65K
10A, 650V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 10N65K is an N-channel Power MOSFET using UTC’s
advanced technology to provide customers a minimum on-state
resistance and superior switching performance, etc.
The UTC 10N65K is generally applied in high efficient DC to DC
converters, PWM motor controls and bridge circuits, etc.
FEATURES
* RDS(ON)<1.2@ VGS=10V
* High Switching Speed
* Improved dv/dt capability
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
10N65KL-TA3-T
10N65KG-TA3-T
TO-220
10N65KL-TF3-T
10N65KG-TF3-T
TO-220F
10N65KL-TF1-T
10N65KG-TF1-T
TO-220F1
10N65KL-TF2-T
10N65KG-TF2-T
TO-220F2
10N65KL-T2Q-T
10N65KG-T2Q-T
TO-262
Note: Pin Assignment: G: Gate D: Drain S: Source
Pin Assignment
123
GDS
GDS
GDS
GDS
GDS
Packing
Tube
Tube
Tube
Tube
Tube
10N65KL-TA3-T
(1)Packing Type
(2)Package Type
(3)Green Package
(1) T: Tube
(2) TA3: TO-220, TF3: TO-220F, TF1: TO-220F1,
TF2: TO-220F2, T2Q: TO-262
(3) L: Lead Free, G: Halogen Free and Lead Free
MARKING
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10N65K
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
650 V
Gate-Source Voltage
Avalanche Current (Note 2)
VGSS
IAR
±30 V
10 A
Drain Current
Continuous
Pulsed (Note 2)
ID
IDM
10 A
38 A
Avalanche Energy
Single Pulsed (Note 3)
Peak Diode Recovery dv/dt (Note 4)
EAS
dv/dt
300 mJ
4.5 V/ns
TO-220/TO-262
156 W
Power Dissipation
TO-220F/TO-220F1
TO-220F2
PD
50 W
52 W
Junction Temperature
TJ
+150
°C
Operating Temperature
TOPR
-55 ~ +150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L=6mH, IAS=10A, VDD=50V, RG=25 , Starting TJ = 25°C
4. ISD 9.5A, di/dt 200A/μs, VDD BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
Junction to Ambient
TO-220/TO-262
Junction to Case
TO-220F/TO-220F1
TO-220F2
SYMBOL
θJA
θJC
RATING
65.2
0.8
2.5
2.4
UNIT
°C/W
°C/W
°C/W
°C/W
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10N65K
Power MOSFET
ELECTRICAL CHARACTERISTICS( TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS = 0V, ID = 250μA
Drain-Source Leakage Current
IDSS VDS = 650V, VGS = 0V
Gate-Source Leakage Current
Forward
Reverse
IGSS
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
Breakdown
Coefficient
Voltage
Temperature BVDSS/TJ ID=250µA, Referenced to 25°C
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
VGS(TH)
RDS(ON)
VDS = VGS, ID = 250μA
VGS = 10V, ID = 5A
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS=25V, VGS=0V, f=1.0 MHz
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
tD(ON)
tR
tD(OFF)
tF
QG
QGS
QGD
VDD=30V, ID =0.5A,
RG =25(Note 1, 2)
VDS=50V, ID=1.3A,
VGS=10 V (Note 1, 2)
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
VSD VGS = 0 V, IS =10A
Maximum Continuous Drain-Source Diode
Forward Current
IS
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
Note: 1. Pulse Test: Pulse width 300μs, Duty cycle 2%
2. Essentially independent of operating temperature.
MIN TYP MAX UNIT
650 V
1 µA
100 nA
-100 nA
0.7 V/°C
2.5 4.5 V
0.5 0.89 1.2
1200 1700 pF
110 160 pF
10.5 16 pF
75
60
180
65
31.3 42
9.3
6.8
ns
ns
ns
ns
nC
nC
nC
1.4 V
10 A
38 A
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10N65K
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
-
+
VDS
-
L
Power MOSFET
RG
VGS
Same Type
as D.U.T.
Driver
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
VDD
VGS
(Driver)
ISD
(D.U.T.)
VDS
(D.U.T.)
Peak Diode Recovery dv/dt Test Circuit
P.W.
Period
P. W.
D= Period
VGS= 10V
IFM, Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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