10N65-Q Datasheet PDF - Unisonic Technologies

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10N65-Q
Unisonic Technologies

Part Number 10N65-Q
Description N-CHANNEL POWER MOSFET
Page 6 Pages


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UNISONIC TECHNOLOGIES CO., LTD
10N65-Q
10A, 650V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 10N65-Q is an N-channel Power MOSFET using UTC’s
advanced technology to provide customers a minimum on-state
resistance and superior switching performance, etc.
The UTC 10N65-Q is generally applied in high efficient DC to
DC converters, PWM motor controls and bridge circuits, etc.
FEATURES
* RDS(ON) < 1.0@ VGS=10V, ID = 5 A
* High Switching Speed
* Improved dv/dt capability
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
10N65L-TA3-T
10N65G-TA3-T
TO-220
10N65L-TF3-T
10N65G-TF3-T
TO-220F
10N65L-TF1-T
10N65G-TF1-T
TO-220F1
10N65L-TF2-T
10N65G-TF2-T
TO-220F2
Note: Pin Assignment: G: Gate D: Drain S: Source
Pin Assignment
123
GDS
GDS
GDS
GDS
Packing
Tube
Tube
Tube
Tube
MARKING
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Copyright © 2015 Unisonic Technologies Co., Ltd
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10N65-Q
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
650 V
Gate-Source Voltage
Avalanche Current (Note 2)
VGSS
IAR
±30 V
10 A
Drain Current
Continuous
Pulsed (Note 2)
ID
IDM
10 A
38 A
Avalanche Energy
Single Pulsed (Note 3)
Peak Diode Recovery dv/dt (Note 4)
EAS
dv/dt
350 mJ
4.5 V/ns
TO-220
156 W
Power Dissipation
TO-220F/TO-220F1
PD
50 W
TO-220F2
48 W
Junction Temperature
TJ
+150
°C
Operating Temperature
TOPR
-55 ~ +150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L=7mH, IAS=10A, VDD=50V, RG=25 , Starting TJ = 25°C
4. ISD 10A, di/dt 200A/μs, VDD BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
Junction to Ambient
TO-220
Junction to Case
TO-220F/TO-220F1
TO-220F2
SYMBOL
θJA
θJC
RATING
62.5
0.8
2.5
2.6
UNIT
°C/W
°C/W
°C/W
°C/W
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10N65-Q
Power MOSFET
ELECTRICAL CHARACTERISTICS( TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward
Reverse
BVDSS
IDSS
IGSS
VGS = 0V, ID = 250μA
VDS = 650V, VGS = 0V
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS = VGS, ID = 250μA
Static Drain-Source On-State Resistance
RDS(ON) VGS = 10V, ID = 5A
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
CISS
COSS
VDS=25V, VGS=0V, f=1.0 MHz
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
Turn-On Rise Time
Turn-Off Delay Time
tR
tD(OFF)
VDD=30V, ID =0.5A,
RG =25(Note 1, 2)
Turn-Off Fall Time
tF
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
QG
QGS
QGD
VDS=50V, ID=1.3A,
VGS=10 V (Note 1, 2)
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
VSD VGS = 0 V, IS =10A
Maximum Continuous Drain-Source Diode
Forward Current
IS
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
Reverse Recovery Time
tRR VGS=0V, IS=10A
Reverse Recovery Charge
QRR dIF/dt = 100 A/μs (Note 1)
Note: 1. Pulse Test: Pulse width 300μs, Duty cycle 2%
2. Essentially independent of operating temperature.
MIN TYP MAX UNIT
650 V
1 µA
100 nA
-100 nA
2.0 4.0 V
1.0
1500
130
25
pF
pF
pF
60 ns
120 ns
310 ns
180 ns
39 nC
8.0 nC
9.5 nC
1.4 V
10 A
40 A
420 ns
4.2 μC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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10N65-Q
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
-
+
VDS
-
L
Power MOSFET
RG
VGS
Same Type
as D.U.T.
Driver
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
VDD
VGS
(Driver)
ISD
(D.U.T.)
VDS
(D.U.T.)
Peak Diode Recovery dv/dt Test Circuit
P.W.
Period
P. W.
D= Period
VGS= 10V
IFM, Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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