10N65 Datasheet PDF - Unisonic Technologies

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10N65
Unisonic Technologies

Part Number 10N65
Description N-CHANNEL POWER MOSFET
Page 9 Pages


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UNISONIC TECHNOLOGIES CO., LTD
10N65
10A, 650V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 10N65 is a high voltage and high current power
MOSFET, designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and a high
rugged avalanche characteristics. This power MOSFET is usually
used at high speed switching applications in power supplies, PWM
motor controls, high efficient DC to DC converters and bridge
circuits.
FEATURES
* RDS(ON) < 0.86@VGS =10V
* Low gate charge ( typical 44 nC)
* Low Crss ( typical 18 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
10N65L-TA3-T
10N65G-TA3-T
10N65L-TF1-T
10N65G-TF1-T
10N65L-TF2-T
10N65G-TF2-T
10N65L-TF3-T
10N65G-TF3-T
10N65L-T2Q-T
10N65G-T2Q-T
10N65L-TQ2-T
10N65G-TQ2-T
10N65L-TQ2-R
10N65G-TQ2-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
TO-220F1
TO-220F2
TO-220F
TO-262
TO-263
TO-263
Pin Assignment
123
GDS
GDS
GDS
GDS
GDS
GDS
GDS
Packing
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10N65
MARKING INFORMATION
PACKAGE
TO-220
TO-220F
TO-220F1
TO-220F2
TO-262
TO-263
MARKING
Power MOSFET
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10N65
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
650
V
Gate-Source Voltage
VGSS
± 30
V
Avalanche Current (Note 2)
Drain Current
Continuous
Pulsed (Note 2)
Avalanche Energy
Single Pulsed (Note 3)
Repetitive (Note 2)
Peak Diode Recovery dv/dt (Note 4)
IAR
ID
IDM
EAS
EAR
dv/dt
10 A
10 A
38 A
700 mJ
15.6 mJ
4.5 V/ns
TO-220
156 W
TO-220F/TO-220F1
50 W
Power Dissipation
TO-220F2
TO-262
PD
52 W
156 W
TO-263
178 W
Junction Temperature
TJ
+150
°C
Operating Temperature
Storage Temperature
TOPR
TSTG
-55 ~ +150
-55 ~ +150
°C
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 14.2mH, IAS = 10A, VDD = 50V, RG = 25 Starting TJ = 25°C
4. ISD 9.5A, di/dt 200A/μs, VDD BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
Junction to Ambient
TO-220
TO-220F/TO-220F1
Junction to Case
TO-220F2
TO-262
TO-263
SYMBOL
θJA
θJC
RATING
62.5
0.8
2.5
2.4
0.8
0.7
UNIT
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
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10N65
Power MOSFET
ELECTRICAL CHARACTERISTICS( TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS=0V, ID= 250μA
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward
Reverse
IDSS VDS=650V, VGS=0V
IGSS
VGS=30V, VDS=0V
VGS=-30V, VDS=0V
Breakdown Voltage Temperature Coefficient BVDSS/TJ ID=250 µA, Referenced to 25°C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS=VGS, ID=250μA
Static Drain-Source On-State Resistance
RDS(ON) VGS=10V, ID=4.75A
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
Output Capacitance
Reverse Transfer Capacitance
COSS
CRSS
VDS=25V, VGS=0V, f=1.0 MHz
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
tD(ON)
tR
tD(OFF)
VDD=325V, ID=10A, RG=25
(Note1, 2)
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
tF
QG
QGS
QGD
VDS=520V, ID=10A, VGS=10V
(Note1, 2)
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
VSD VGS=0V, IS=10A
Maximum Continuous Drain-Source Diode
Forward Current
IS
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
Reverse Recovery Time
trr VGS=0V, IS=10A,
Reverse Recovery Charge
QRR dIF/dt=100A/µs (Note1)
Notes: 1. Pulse Test : Pulse width 300µs, Duty cycle 2%
2. Essentially independent of operating temperature
MIN TYP MAX UNIT
650 V
1 µA
100 nA
-100 nA
0.7 V/°C
2.0 4.0 V
0.72 0.86
1570 2040 pF
166 215 pF
18 24 pF
23 55
69 150
144 300
77 165
44 57
6.7
18.5
ns
ns
ns
ns
nC
nC
nC
1.4 V
10 A
38 A
420 ns
4.2 µC
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