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B - 119 Datasheets PDF Index
Manufacture | Part Number | Description | |
SHANGHAI BELLING |
BL8550 | BL8550 400mA Low Dropout Voltage Regulator Outlin | |
SHANGHAI BELLING |
BL8551 | BL8551 150mA CMOS High Input | |
BELLING |
BL8552 | BL8552 300mA Low Consumption Linear Regulator GE | |
SHANGHAI BELLING |
BL8553 | Features BL8553 400mA CMOS Low Dropout Voltage Lo | |
BELLING |
BL8554 | DESCRIPTION BL8554 series is a group of positive v | |
SHANGHAI BELLING |
BL8555 | Features BL8555 Low noise 150mA LDO regulator Gen | |
BELLING |
BL8558 | BL8558 Low noise, fast response 500mA LDO regulat | |
BELLING |
BL8559 | BL8559 GENERAL DESCRIPTION BL8559 series are a gr | |
SHANGHAI BELLING |
BL8560 | BL8560 Dual,Low noise, 150mA | |
BELLING |
BL8563 | BL8563 300mA High PSRR, Linear Regulator, w. Outp | |
BELLING |
BL8565 | BL8565 REV1.0-Revised DEC 2007 500mA High PSRR, Lo | |
BELLING |
BL8566 | BL8566 Dual 300mA High PSRR LDO FEATURES • Two | |
BELLING |
BL8567 | BL8567 300mA, Wide Input Voltage, Low Consumption | |
BELLING |
BL8568 | BL8568 500mA High PSRR, Low Noise, Fast Response L | |
BELLING |
BL8569 | BL8569 Dual 500mA High PSRR Linear Regulator DES | |
BELLING |
BL8572 | BL8572 ■ GENERAL DESCRIPTION The BL8572 is a si | |
BELLING |
BL8578 | BL8578 DESCRIPTION The BL8578 is a 1.6A Li-Ion ba | |
BELLING |
BL8579 | BL8579 移动电源用充电升压能源管理芯 | |
BELLING |
BL8580 | BL8580/1 WLED Linear Driver For Li-Ion Battery Ap | |
BELLING |
BL8581 | BL8580/1 WLED Linear Driver For Li-Ion Battery Ap | |
BELLING |
BL8581A | BL8581A PWM or Singl-Wire Dimming, 4-Channels WLE | |
BELLING |
BL8582 | BL8582 Single-Wire Dimming, 3-Channels WLED Linea | |
BELLING |
BL8583 | BL8583 Preliminary Datasheet 概要 串行输� | |
BELLING |
BL8584 | DESCRIPTION The BL8584 is a CMOS based White/Blue | |
SHANGHAI BELLING |
BL8585 | DESCRIPTION The BL8585 is a high-voltage adjustabl | |
BELLING |
BL8586 | BL8586 Preliminary Datasheet 概要 串行输入 | |
BELLING |
BL8587 | BL8587 High Efficiency 1×/1.5× Charge Pump 4-Ch | |
BELLING |
BL8588 | BL8588 High Efficiency 1×/1.5× Charge Pump 4-Ch | |
BELLING |
BL8589 | BL8589 16-Channel Constant-Current LED Driver DE | |
BELLING |
BL8591 | BL8591 100mA High PSRR, Fast Response Linear Regu | |
BELLING |
BL8593 | BL8593 P-Channel MOSFET with 0.12V Schottky Diode | |
BELLING |
BL8595 | BL8595 18V/1A PNP with N-MOSFET CHARGE IC DESCRI | |
BELLING |
BL8596 | BL8596 LDO mode OVP with Integrated P-MOSFET DES | |
BELLING |
BL8598 | BL8598 Adjustable Overvoltage Protector with High | |
SHANGHAI BELLING |
BL8602 | BL8602 BL8602 Low Power Audio | |
BELLING |
BL8602G | 电话机低压音频放大电路 概述: BL8602 | |
SHANGHAI BELLING |
BL8701 | BL 8701 Switch Mode Power Supply Controller Integr | |
SHANGHAI BELLING |
BL8701 | BL8701 810 :200233 Tel:86-21-64850700 Fax:86-21-6 | |
BELLING |
BL8851 | BL8851 Current Mode PWM Power Switch GENERAL DESCR | |
BELLING |
BL8891B | BL8891B Current Mode PWM Power Switch Freq Shuffli | |
GME |
BL8N40F | Production specification N-Channel Enhancement Mo | |
GME |
BL8N60 | Production specification N-Channel Enhancement Mo | |
GME |
BL8N60F | Production specification N-Channel Enhancement Mo | |
GME |
BL8N65F | Production specification N-Channel Enhancement Mo | |
GME |
BL8N80F | 8A,800V N-Channel Power Mosfet FEATURES Typic | |
BELLING |
BL9103 | BL9103 250mA,Low Power Consumption LDO BL9103 Se | |
BELLING |
BL9110 | BL9110 1A Low Dropout, Low Quiescent Current High | |
BELLING |
BL9118 | BL9118 800mA Adjustable Voltage High Speed LDO Re | |
SHANGHAI BELLING |
BL9148 | BL9148 General infrared Ray R | |
SHANGHAI BELLING |
BL9148B | 红外遥控发射电路BL914 | |
Shanghai Belling |
BL9149 | BL9149/BL9150 General infrared Ray Remote Control | |
Shanghai Belling |
BL9150 | BL9149/BL9150 General infrare | |
BELLING |
BL9152 | BL9152 40V Input, 500mA Output Current, Low Dropou | |
BELLING |
BL9161 | FEATURES Ultra-low Noise Ultra-Fast Respon | |
Shanghai Belling |
BL9180 | BL9180 Dual,3 Dual,300mA UltraUltra-low Noise CMOS | |
BELLING |
BL9193 | BL9193 300mA Ultra-low Noise, Ultra-Fast CMOS LDO | |
BELLING |
BL9195 | BL9195 300mA 3-Pin, Ultra Fast, Ultra Low Dropout | |
Belling |
BL9198 | BL9198 300mA UltraUltra-low Noise, UltraUltra-Fast | |
BELLING |
BL9310 | BL9310 1.5 MHz, 1A Synchronous Buck Converter FEA | |
Belling |
BL9328 | BL9328 1.5 MHz, Dual 800mA Synchronous Buck Conver | |
BELLING |
BL9352A | V1.2 BL9352A GENERAL DESCRIPTION The BL9352A is a | |
Belling |
BL9382 | BL9382 18V (30V spike) 2A Synchronous Buck Conver | |
Belling |
BL9384 | BL9384 3A, 18V High Efficiency Synchronous Step-D | |
Belling |
BL9384B | BL9384B 3A, 20V High Efficiency Synchronous Step- | |
BELLING |
BL93C46 | Shanghai Belling Corp., Ltd BL93C46 1K bits (128 X | |
BELLING |
BL93C56 | Shanghai Belling Corp., Ltd BL93C56/BL93C66 BL93 | |
BELLING |
BL93C66 | Shanghai Belling Corp., Ltd BL93C56/BL93C66 BL93 | |
BELLING |
BL9580 | BL9580 36V, 1.4A Step-down High Brightness LED Dri | |
BELLING |
BL9581 | BL9581 36V, 1.2A Step-down High Brightness LED Dri | |
BELLING |
BL9582 | BL9582 32V, 1.4A Step-down High Brightness LED Dri | |
BELLING |
BL9582B | BL9582B 32V, 1.4A Step-down High Brightness LED D | |
BELLING |
BL9641 | BL9641 42V Input Standoff Voltage, 0.7A Step-Down | |
BELLING |
BL9703 | BL9703 BL9703 高性能电流模式 PWM 控制芯� | |
BELLING |
BL9705 | BL9705 BL9705 低功耗电流模式 PWM 控制功� | |
GME |
BL9N20 | Production specification N-Channel Enhancement Mo | |
GME |
BL9N30F | N-Channel MOSFET 300V,9A,450mΩ FEATURES 9.0 | |
NXP |
BLA0912-250 | BLA0912-250 Avionics LDMOS transistor Rev. 02 — | |
NXP Semiconductors |
BLA0912-250R | BLA0912-250R Avionics LDMOS power transistor Rev. | |
BEDFORD OPTO TECHNOLOGY |
BLA10 | These components are RoHS compliant Pb BLA 10 is | |
NXP |
BLA1011-10 | DISCRETE SEMICONDUCTORS DATA SHEET M3D381 BLA10 | |
NXP |
BLA1011-2 | DISCRETE SEMICONDUCTORS DATA SHEET M3D438 BLA10 | |
NXP |
BLA1011-200 | BLA1011-200; BLA1011S-200 Avi | |
NXP |
BLA1011-300 | BLA1011-300 Avionics LDMOS tr | |
NXP |
BLA1011S-200 | BLA1011-200; BLA1011S-200 Avi | |
GME |
BLA1117-1.5 | Production specification 800 mA Low-Dropout Linea | |
GME |
BLA1117-1.8 | Production specification 800 mA Low-Dropout Linea | |
GME |
BLA1117-2.5 | Production specification 800 mA Low-Dropout Linea | |
GME |
BLA1117-2.85 | Production specification 800 mA Low-Dropout Linea | |
GME |
BLA1117-3.3 | Production specification 800 mA Low-Dropout Linea | |
GME |
BLA1117-5.0 | Production specification 800 mA Low-Dropout Linea | |
GME |
BLA1117-ADJ | Production specification 800 mA Low-Dropout Linea | |
Murata Electronics |
BLA31xxxxxx | !Note Please read rating and !CAUTION (for storage | |
Ampleon |
BLA6G1011-200R | BLA6G1011-200R; BLA6G1011L(S)-200RG Power LDMOS t | |
Ampleon |
BLA6G1011L-200RG | BLA6G1011-200R; BLA6G1011L(S)-200RG Power LDMOS t | |
Ampleon |
BLA6G1011LS-200RG | BLA6G1011-200R; BLA6G1011L(S)-200RG Power LDMOS t | |
Ampleon |
BLA6H0912-500 | BLA6H0912-500 LDMOS avionics radar power transisto | |
Ampleon |
BLA6H0912L-1000 | BLA6H0912L-1000; BLA6H0912LS-1000 LDMOS avionics p | |
Ampleon |
BLA6H0912LS-1000 | BLA6H0912L-1000; BLA6H0912LS-1000 LDMOS avionics p | |
Ampleon |
BLA6H1011-600 | BLA6H1011-600 LDMOS avionics power transistor Rev. | |
NXP |
BLA6H1011-600 | BLA6H1011-600 LDMOS avionics | |
Ampleon |
BLA8G1011L-300 | BLA8G1011L(S)-300; BLA8G1011L(S)-300G Power LDMOS | |
Ampleon |
BLA8G1011L-300G | BLA8G1011L(S)-300; BLA8G1011L(S)-300G Power LDMOS | |
Ampleon |
BLA8G1011LS-300 | BLA8G1011L(S)-300; BLA8G1011L(S)-300G Power LDMOS | |
Ampleon |
BLA8G1011LS-300G | BLA8G1011L(S)-300; BLA8G1011L(S)-300G Power LDMOS | |
Ampleon |
BLA8H0910L-500 | BLA8H0910L-500; BLA8H0910LS-500 Power LDMOS transi | |
Ampleon |
BLA8H0910LS-500 | BLA8H0910L-500; BLA8H0910LS-500 Power LDMOS transi | |
Ampleon |
BLA9G1011L-300 | BLA9G1011L(S)-300; BLA9G1011L(S)-300G Power LDMOS | |
Ampleon |
BLA9G1011L-300G | BLA9G1011L(S)-300; BLA9G1011L(S)-300G Power LDMOS | |
Ampleon |
BLA9G1011LS-300 | BLA9G1011L(S)-300; BLA9G1011L(S)-300G Power LDMOS | |
Ampleon |
BLA9G1011LS-300G | BLA9G1011L(S)-300; BLA9G1011L(S)-300G Power LDMOS | |
BELLING |
BLAD14D105 | 14位, 105 MSPS, 1.8 V, 低噪声 双通道模数� | |
BELLING |
BLAD14D125 | 14位, 125 MSPS, 1.8 V 双通道模数转换器 (A | |
BELLING |
BLAD14D80 | 14位, 80MSPS, 1.8 V 双通道模数转换器 (ADC | |
Murata Electronics |
BLAxxxxx | ||
Murata Electronics |
BLAxxxxxx | !Note Please read rating and !CAUTION (for storage | |
All Sensors |
BLC-015A | www.allsensors.com R Signed Original On F w.allse | |
All Sensors |
BLC-L01D | www.allsensors.com R Signed Original On F w.allse | |
All Sensors |
BLC-L05D | www.allsensors.com R Signed Original On F w.allse | |
All Sensors |
BLC-L10D | www.allsensors.com R Signed Original On F w.allse | |
All Sensors |
BLC-L20D | www.allsensors.com R Signed Original On F w.allse | |
All Sensors |
BLC-L30D | www.allsensors.com R Signed Original On F w.allse | |
Ampleon |
BLC10G18XS-360AVT | BLC10G18XS-360AVT Power LDMOS transistor Rev. 1 � | |
Ampleon |
BLC10G18XS-400AVT | BLC10G18XS-400AVT Power LDMOS transistor Rev. 1 � | |
Ampleon |
BLC10G18XS-550AVT | BLC10G18XS-550AVT Power LDMOS transistor Rev. 1 � | |
Ampleon |
BLC10G18XS-552AVT | BLC10G18XS-552AVT Power LDMOS transistor Rev. 1 � | |
Ampleon |
BLC10G19LS-250WT | BLC10G19LS-250WT Power LDMOS transistor Rev. 1 � | |
Ampleon |
BLC10G20LS-240PWT | BLC10G20LS-240PWT Power LDMOS transistor Rev. 1 � | |
Ampleon |
BLC10G22LS-240PVT | BLC10G22LS-240PVT Power LDMOS transistor Rev. 2 � | |
Ampleon |
BLC10G27LS-320AVT | BLC10G27LS-320AVT Power LDMOS transistor Rev. 2 � | |
Ampleon |
BLC10M6XS200 | BLC10M6XS200 Power LDMOS transistor Rev. 1 — 5 D | |
SHANGHAI BELLING |
BLC149 | BLC149 变容二极管 描述 | |
TOKO |
BLC210 | Inverter Transformers BLC210 | |
Ampleon |
BLC2425M10LS250 | BLC2425M10LS250 Power LDMOS transistor Rev. 3 — | |
Ampleon |
BLC2425M10LS500P | BLC2425M10LS500P Power LDMOS transistor Rev. 2 � | |
Ampleon |
BLC2425M8LS300P | BLC2425M8LS300P Power LDMOS transistor Rev. 3 — | |
Ampleon |
BLC2425M9LS250 | BLC2425M9LS250 Power LDMOS transistor Rev. 3 — 2 | |
NXP |
BLC6G10-160 | BLC6G10-160; BLC6G10LS-160 UH | |
NXP |
BLC6G10-200 | BLC6G10-200; BLC6G10LS-200 UH | |
NXP |
BLC6G10LS-160 | BLC6G10-160; BLC6G10LS-160 UH | |
NXP |
BLC6G10LS-200 | BLC6G10-200; BLC6G10LS-200 UH | |
NXP |
BLC6G20-110 | BLC6G20-110; BLC6G20LS-110 UH | |
Philips |
BLC6G20-140 | BLC6G20-140; BLC6G20LS-140 UH | |
NXP |
BLC6G20-75 | BLC6G20-75; BLC6G20LS-75 UHF | |
NXP |
BLC6G20LS-110 | BLC6G20-110; BLC6G20LS-110 UH | |
Philips |
BLC6G20LS-140 | BLC6G20-140; BLC6G20LS-140 UH | |
NXP |
BLC6G20LS-75 | BLC6G20-75; BLC6G20LS-75 UHF | |
NXP |
BLC6G22-100 | BLC6G22-100; BLC6G22LS-100 UH | |
NXP |
BLC6G22-130 | BLC6G22-130; BLC6G22LS-130 UH | |
NXP |
BLC6G22LS-100 | BLC6G22-100; BLC6G22LS-100 UH | |
NXP |
BLC6G22LS-130 | BLC6G22-130; BLC6G22LS-130 UH | |
Ampleon |
BLC8G09XS-400AVT | BLC8G09XS-400AVT Power LDMOS transistor Rev. 2 � | |
Ampleon |
BLC8G20LS-310AV | BLC8G20LS-310AV Power LDMOS transistor Rev. 5 — | |
Ampleon |
BLC8G20LS-400AV | BLC8G20LS-400AV Power LDMOS transistor Rev. 4 — | |
Ampleon |
BLC8G21LS-160AV | BLC8G21LS-160AV Power LDMOS transistor Rev. 4 — | |
Ampleon |
BLC8G22LS-450AV | BLC8G22LS-450AV Power LDMOS transistor Rev. 6 — | |
Ampleon |
BLC8G24LS-241AV | BLC8G24LS-241AV Power LDMOS transistor Rev. 2 — | |
Ampleon |
BLC8G27LS-100AV | BLC8G27LS-100AV Power LDMOS transistor Rev. 5 — | |
Ampleon |
BLC8G27LS-140AV | BLC8G27LS-140AV Power LDMOS transistor Rev. 4 — | |
Ampleon |
BLC8G27LS-160AV | BLC8G27LS-160AV Power LDMOS transistor Rev. 5 — | |
Ampleon |
BLC8G27LS-180AV | BLC8G27LS-180AV Power LDMOS transistor Rev. 5 — | |
Ampleon |
BLC8G27LS-210PV | BLC8G27LS-210PV Power LDMOS transistor Rev. 4 — | |
Ampleon |
BLC8G27LS-240AV | BLC8G27LS-240AV Power LDMOS transistor Rev. 5 — | |
Ampleon |
BLC8G27LS-60AV | BLC8G27LS-60AV; BLC8G27LS-60AVH Power LDMOS transi | |
Ampleon |
BLC8G27LS-60AVH | BLC8G27LS-60AV; BLC8G27LS-60AVH Power LDMOS transi | |
Ampleon |
BLC9G15LS-400AVT | BLC9G15LS-400AVT Power LDMOS transistor Rev. 3 � | |
Ampleon |
BLC9G15XS-400AVT | BLC9G15XS-400AVT Power LDMOS transistor Rev. 1 � | |
Ampleon |
BLC9G20LS-120V | BLC9G20LS-120V Power LDMOS transistor Rev. 5 — 2 | |
Ampleon |
BLC9G20LS-120VT | BLC9G20LS-120VT Power LDMOS transistor Rev. 1 — | |
Ampleon |
BLC9G20LS-160PV | BLC9G20LS-160PV Power LDMOS transistor Rev. 3 — | |
Ampleon |
BLC9G20LS-240PV | BLC9G20LS-240PV Power LDMOS transistor Rev. 4 — | |
Ampleon |
BLC9G20LS-361AVT | BLC9G20LS-361AVT Power LDMOS transistor Rev. 3 � | |
Ampleon |
BLC9G20LS-470AVT | BLC9G20LS-470AVT Power LDMOS transistor Rev. 3 � | |
Ampleon |
BLC9G20XS-160AV | BLC9G20XS-160AV Power LDMOS transistor Rev. 3 — | |
Ampleon |
BLC9G20XS-400AVT | BLC9G20XS-400AVT Power LDMOS transistor Rev. 3 � | |
Ampleon |
BLC9G20XS-550AVT | BLC9G20XS-550AVT Power LDMOS transistor Rev. 3 � | |
Ampleon |
BLC9G21LS-60AV | BLC9G21LS-60AV Power LDMOS transistor Rev. 1 — 6 | |
Ampleon |
BLC9G22LS-120VT | BLC9G22LS-120VT Power LDMOS transistor Rev. 1 — | |
Ampleon |
BLC9G22LS-160VT | BLC9G22LS-160VT Power LDMOS transistor Rev. 2 — | |
Ampleon |
BLC9G22XS-400AVT | BLC9G22XS-400AVT Power LDMOS transistor Rev. 3 � | |
Ampleon |
BLC9G24XS-170AV | BLC9G24XS-170AV Power LDMOS transistor Rev. 3 — | |
Ampleon |
BLC9G27LS-151AV | BLC9G27LS-151AV Power LDMOS transistor Rev. 3 — | |
Ampleon |
BLC9G27XS-380AVT | BLC9G27XS-380AVT Power LDMOS transistor Rev. 2 � | |
BLUE ROCKET ELECTRONICS |
BLD122D | BLD122D Rev.E Mar.-2016 DATA SHEET 描述 / Desc | |
LZG |
BLD123D | BLD123D 硅 NPN 半导体三极管/SILICON NPN TR | |
BLUE ROCKET ELECTRONICS |
BLD123D | BLD123D Rev.E Mar.-2016 DATA SHEET 描述 / Desc | |
BLUE ROCKET ELECTRONICS |
BLD128D | BLD128D Rev.E Mar.-2016 DATA SHEET 描述 / Desc | |
JILIN SINO |
BLD128D | NPN 型高压功率开关晶体管 HIGH VOLTAGE FA | |
BLUE ROCKET ELECTRONICS |
BLD128DA | BLD128DA Rev.E Mar.-2016 DATA SHEET 描述 / Des | |
BLUE ROCKET ELECTRONICS |
BLD128DD | BLD128DD Rev.E May.-2016 DATA SHEET 描述 / Des | |
Shenzhen SI Semiconductors |
BLD135D | 深圳深爱半导体股份有限公司 Shenzhen S | |
Shenzhen SI Semiconductors |
BLD137D | Shenzhen SI Semiconductors Co., LTD. Product Spec | |
INCHANGE |
BLD137DL | isc Silicon NPN Power Transistors INCHANGE Semico | |
Shenzhen SI Semiconductors |
BLD139D | Shenzhen SI Semiconductors Co., LTD. BLD SERIES TR | |
Red Diamond Optoelctronics |
BLD139D | BLD139D BLD 系列晶体管/BLD SERIES TRANSISTOR | |
NXP Semiconductors |
BLD6G21L-50 | BLD6G21L-50; BLD6G21LS-50 TD-SCDMA 2010 MHz to 202 | |
NXP Semiconductors |
BLD6G21LS-50 | BLD6G21L-50; BLD6G21LS-50 TD-SCDMA 2010 MHz to 202 | |
NXP Semiconductors |
BLD6G22L-50 | BLD6G22L-50; BLD6G22LS-50 W-CDMA 2110 MHz to 2170 | |
Ampleon |
BLD6G22L-50 | BLD6G22L-50; BLD6G22LS-50 W-CDMA 2110 MHz to 2170 | |
NXP Semiconductors |
BLD6G22LS-50 | BLD6G22L-50; BLD6G22LS-50 W-CDMA 2110 MHz to 2170 | |
Ampleon |
BLD6G22LS-50 | BLD6G22L-50; BLD6G22LS-50 W-CDMA 2110 MHz to 2170 |
Index : 0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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